• Advanced Photonics Nexus
  • Vol. 3, Issue 6, ()
Li Zhengkai, Zhang Mingjie, Chen Yuanzhi, Lu Junchang, Wen Zhanbo, Wei Banghu, Wang Mengyi, Xu Jiayue, Zhang Qingli
Author Affiliations
  • Shanghai Institute of Technology
  • Jinan University
  • Department of Optoelectronic Engineering
  • Chinese Academy of Sciences Hefei Institutes of Physical Science Anhui Institute of Optics and Fine Mechanics
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    Abstract

    In the field of short-range optical interconnects, the development of low-power-consumption, ultra-wideband on-chip optical waveguide amplifiers is of critical importance. Central to this advancement is the creation of host materials that require low pump power and provide ultra-broadband emission capabilities. This study introduces a tri-doped lanthanum aluminate glass (composition: 5Er2O3-5Yb2O3-0.2Tm2O3-43.8La2O3-46Al2O3), which exhibits exceptional near-infrared (NIR) luminescence intensity, significantly outperforming other bands by three orders of magnitude. This glass can achieve an ultra-wideband near-infrared gain spanning 478 nm, from 1510 nm to 1988 nm. Notably, the glass achieves positive optical gain with a low population inversion threshold (P > 0.2), highlighting its efficiency and low-power consumption. The high glass transition temperature (Tg ~ 842ºC) and large delta temperature (ΔT ~ 120ºC) between Tg and the onset of crystallization indicate excellent thermal stability, which is crucial for producing high-quality amorphous films for on-chip amplifiers. This research examines the unique energy levels and spectral properties of the Er3+-Yb3+-Tm3+ tri-doped glass, assessing its potential for use in ultra-wideband on-chip optical waveguide amplifiers. This work lays the groundwork for low-power, ultra-broadband on-chip waveguide amplifiers, offering new avenues for short-range optical interconnect systems.
    Manuscript Accepted: Sep. 18, 2024
    Posted: Oct. 28, 2024
    DOI: APN