Li Zhengkai, Zhang Mingjie, Chen Yuanzhi, Lu Junchang, Wen Zhanbo, Wei Banghu, Wang Mengyi, Xu Jiayue, Zhang Qingli
Author Affiliations
Shanghai Institute of TechnologyJinan UniversityDepartment of Optoelectronic EngineeringChinese Academy of Sciences Hefei Institutes of Physical Science Anhui Institute of Optics and Fine Mechanicsshow less
Abstract
In the field of short-range optical interconnects, the development of low-power-consumption, ultra-wideband on-chip optical waveguide amplifiers is of critical importance. Central to this advancement is the creation of host materials that require low pump power and provide ultra-broadband emission capabilities. This study introduces a tri-doped lanthanum aluminate glass (composition: 5Er2O3-5Yb2O3-0.2Tm2O3-43.8La2O3-46Al2O3), which exhibits exceptional near-infrared (NIR) luminescence intensity, significantly outperforming other bands by three orders of magnitude. This glass can achieve an ultra-wideband near-infrared gain spanning 478 nm, from 1510 nm to 1988 nm. Notably, the glass achieves positive optical gain with a low population inversion threshold (P > 0.2), highlighting its efficiency and low-power consumption. The high glass transition temperature (Tg ~ 842ºC) and large delta temperature (ΔT ~ 120ºC) between Tg and the onset of crystallization indicate excellent thermal stability, which is crucial for producing high-quality amorphous films for on-chip amplifiers. This research examines the unique energy levels and spectral properties of the Er3+-Yb3+-Tm3+ tri-doped glass, assessing its potential for use in ultra-wideband on-chip optical waveguide amplifiers. This work lays the groundwork for low-power, ultra-broadband on-chip waveguide amplifiers, offering new avenues for short-range optical interconnect systems.