Journals >Opto-Electronic Advances
Contents
2018
Volume: 1 Issue 3
3 Article(s)
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Review
Germanium-tin alloys: applications for optoelectronics in mid-infrared spectra
Cizhe Fang, Yan Liu, Qingfang Zhang, Genquan Han, Xi Gao, Yao Shao, Jincheng Zhang, and Yue Hao
We summarize our work of the optoelectronic devices based on Germanium-tin (GeSn) alloys assisted with the Si3N4 liner stressor in mid-infrared (MIR) domains. The device characteristics are thoroughly analyzed by the strain distribution, band structure, and absorption characteristics. Numerical and analytical methods sWe summarize our work of the optoelectronic devices based on Germanium-tin (GeSn) alloys assisted with the Si3N4 liner stressor in mid-infrared (MIR) domains. The device characteristics are thoroughly analyzed by the strain distribution, band structure, and absorption characteristics. Numerical and analytical methods show that with optimal structural parameters, the device performance can be further improved and the wavelength application range can be extended to 2~5 μm in the mid-infrared spectra. It is demonstrated that this proposed strategy provides an effective technique for the strained-GeSn devices in future optical designs, which will be competitive for the optoelectronics applications in mid-infrared wavelength..
Opto-Electronic Advances
- Publication Date: Aug. 01, 2018
- Vol. 1, Issue 3, 180004 (2018)
850/940-nm VCSEL for optical communication and 3D sensing
Chih-Hsien Cheng, Chih-Chiang Shen, Hsuan-Yun Kao, Dan-Hua Hsieh, Huai-Yung Wang, Yen-Wei Yeh, Yun-Ting Lu, Sung-Wen Huang Chen, Cheng-Ting Tsai, Yu-Chieh Chi, Tsung Sheng Kao, Chao-Hsin Wu, Hao-Chung Kuo, Po-Tsung Lee, and Gong-Ru Lin
This paper is going to review the state-of-the-art of the high-speed 850/940-nm vertical cavity surface emitting laser (VCSEL), discussing the structural design, mode control and the related data transmission performance. InGaAs/AlGaAs multiple quantum well (MQW) was used to increase the differential gain and photon deThis paper is going to review the state-of-the-art of the high-speed 850/940-nm vertical cavity surface emitting laser (VCSEL), discussing the structural design, mode control and the related data transmission performance. InGaAs/AlGaAs multiple quantum well (MQW) was used to increase the differential gain and photon density in VCSEL. The multiple oxide layers and oxide-confined aperture were well designed in VCSEL to decrease the parasitic capacitance and generate single mode (SM) VCSEL. The maximal modulation bandwidth of 30 GHz was achieved with well-designed VCSEL structure. At the end of the paper, other applications of the near-infrared VCSELs are discussed..
Opto-Electronic Advances
- Publication Date: Aug. 01, 2018
- Vol. 1, Issue 3, 180005 (2018)
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