Journals >Opto-Electronic Advances
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2024
Volume: 7 Issue 3
6 Article(s)
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Research Articles
Author Correction: ITO-free silicon-integrated perovskite electrochemical cell for light-emission and light-detection
Maria Baeva, Dmitry Gets, Artem Polushkin, Aleksandr Vorobyov, Aleksandr Goltaev, Vladimir Neplokh, Alexey Mozharov, Dmitry V. Krasnikov, Albert G. Nasibulin, Ivan Mukhin, and Sergey Makarov
Opto-Electronic Advances
- Publication Date: Mar. 20, 2024
- Vol. 7, Issue 3, 220154C-1 (2024)
Breaking the optical efficiency limit of virtual reality with a nonreciprocal polarization rotator
Yuqiang Ding, Zhenyi Luo, Garimagai Borjigin, and Shin-Tson Wu
A catadioptric lens structure, also known as pancake lens, has been widely used in virtual reality (VR) displays to reduce the formfactor. However, the utilization of a half mirror (HM) to fold the optical path thrice leads to a significant optical loss. The theoretical maximum optical efficiency is merely 25%. To tranA catadioptric lens structure, also known as pancake lens, has been widely used in virtual reality (VR) displays to reduce the formfactor. However, the utilization of a half mirror (HM) to fold the optical path thrice leads to a significant optical loss. The theoretical maximum optical efficiency is merely 25%. To transcend this optical efficiency constraint while retaining the foldable characteristic inherent to traditional pancake optics, in this paper, we propose a theoretically lossless folded optical system to replace the HM with a nonreciprocal polarization rotator. In our feasibility demonstration experiment, we used a commercial Faraday rotator (FR) and reflective polarizers to replace the lossy HM. The theoretically predicted 100% efficiency can be achieved approximately by using two high-extinction-ratio reflective polarizers. In addition, we evaluated the ghost images using a micro-OLED panel in our imaging system. Indeed, the ghost images can be suppressed to undetectable level if the optics are with antireflection coating. Our novel pancake optical system holds great potential for revolutionizing next-generation VR displays with lightweight, compact formfactor, and low power consumption..
Opto-Electronic Advances
- Publication Date: Jan. 26, 2024
- Vol. 7, Issue 3, 230178-1 (2024)
Luminescence regulation of Sb3+ in 0D hybrid metal halides by hydrogen bond network for optical anti-counterfeiting
Dehai Liang, Saif M. H. Qaid, Xin Yang, Shuangyi Zhao, Binbin Luo, Wensi Cai, Qingkai Qian, and Zhigang Zang
The Sb3+ doping strategy has been proven to be an effective way to regulate the band gap and improve the photophysical properties of organic-inorganic hybrid metal halides (OIHMHs). However, the emission of Sb3+ ions in OIHMHs is primarily confined to the low energy region, resulting in yellow or red emissions. To dateThe Sb3+ doping strategy has been proven to be an effective way to regulate the band gap and improve the photophysical properties of organic-inorganic hybrid metal halides (OIHMHs). However, the emission of Sb3+ ions in OIHMHs is primarily confined to the low energy region, resulting in yellow or red emissions. To date, there are few reports about green emission of Sb3+-doped OIHMHs. Here, we present a novel approach for regulating the luminescence of Sb3+ ions in 0D C10H22N6InCl7·H2O via hydrogen bond network, in which water molecules act as agents for hydrogen bonding. Sb3+-doped C10H22N6InCl7·H2O shows a broadband green emission peaking at 540 nm and a high photoluminescence quantum yield (PLQY) of 80%. It is found that the intense green emission stems from the radiative recombination of the self-trapped excitons (STEs). Upon removal of water molecules with heat, C10H22N6In1-xSbxCl7 generates yellow emission, attributed to the breaking of the hydrogen bond network and large structural distortions of excited state. Once water molecules are adsorbed by C10H22N6In1-xSbxCl7, it can subsequently emit green light. This water-induced reversible emission switching is successfully used for optical security and information encryption. Our findings expand the understanding of how the local coordination structure influences the photophysical mechanism in Sb3+-doped metal halides and provide a novel method to control the STEs emission..
Opto-Electronic Advances
- Publication Date: Mar. 13, 2024
- Vol. 7, Issue 3, 230197-1 (2024)
Self-polarized RGB device realized by semipolar micro-LEDs and perovskite-in-polymer films for backlight applications
Tingwei Lu, Yue Lin, Tianqi Zhang, Yue Huang, Xiaotong Fan, Shouqiang Lai, Yijun Lu, Hao-Chung Kuo, Zhong Chen, Tingzhu Wu, and Rong Zhang
In backlighting systems for liquid crystal displays, conventional red, green, and blue (RGB) light sources that lack polarization properties can result in a significant optical loss of up to 50% when passing through a polarizer. To address this inefficiency and optimize energy utilization, this study presents a high-peIn backlighting systems for liquid crystal displays, conventional red, green, and blue (RGB) light sources that lack polarization properties can result in a significant optical loss of up to 50% when passing through a polarizer. To address this inefficiency and optimize energy utilization, this study presents a high-performance device designed for RGB polarized emissions. The device employs an array of semipolar blue μLEDs with inherent polarization capabilities, coupled with mechanically stretched films of green-emitting CsPbBr3 nanorods and red-emitting CsPbI3-Cs4PbI6 hybrid nanocrystals. The CsPbBr3 nanorods in the polymer film offer intrinsic polarization emission, while the aligned-wire structures formed by the stable CsPbI3-Cs4PbI6 hybrid nanocrystals contribute to substantial anisotropic emissions, due to their high dielectric constant. The resulting device achieved RGB polarization degrees of 0.26, 0.48, and 0.38, respectively, and exhibited a broad color gamut, reaching 137.2% of the NTSC standard and 102.5% of the Rec. 2020 standard. When compared to a device utilizing c-plane LEDs for excitation, the current approach increased the intensity of light transmitted through the polarizer by 73.6%. This novel fabrication approach for polarized devices containing RGB components holds considerable promise for advancing next-generation display technologies..
Opto-Electronic Advances
- Publication Date: Mar. 08, 2024
- Vol. 7, Issue 3, 230210-1 (2024)
A highly sensitive LITES sensor based on a multi-pass cell with dense spot pattern and a novel quartz tuning fork with low frequency
Yahui Liu, Shunda Qiao, Chao Fang, Ying He, Haiyue Sun, Jian Liu, and Yufei Ma
A highly sensitive light-induced thermoelectric spectroscopy (LITES) sensor based on a multi-pass cell (MPC) with dense spot pattern and a novel quartz tuning fork (QTF) with low resonance frequency is reported in this manuscript. An erbium-doped fiber amplifier (EDFA) was employed to amplify the output optical power sA highly sensitive light-induced thermoelectric spectroscopy (LITES) sensor based on a multi-pass cell (MPC) with dense spot pattern and a novel quartz tuning fork (QTF) with low resonance frequency is reported in this manuscript. An erbium-doped fiber amplifier (EDFA) was employed to amplify the output optical power so that the signal level was further enhanced. The optical path length (OPL) and the ratio of optical path length to volume (RLV) of the MPC is 37.7 m and 13.8 cm-2, respectively. A commercial QTF and a self-designed trapezoidal-tip QTF with low frequency of 9461.83 Hz were used as the detectors of the sensor, respectively. The target gas selected to test the performance of the system was acetylene (C2H2). When the optical power was constant at 1000 mW, the minimum detection limit (MDL) of the C2H2-LITES sensor can be achieved 48.3 ppb when using the commercial QTF and 24.6 ppb when using the trapezoidal-tip QTF. An improvement of the detection performance by a factor of 1.96 was achieved after replacing the commercial QTF with the trapezoidal-tip QTF..
Opto-Electronic Advances
- Publication Date: Feb. 18, 2024
- Vol. 7, Issue 3, 230230-1 (2024)
Multi-wavelength nanowire micro-LEDs for future high speed optical communication
Ayush Pandey, and Zetian Mi
The future of optoelectronics is directed towards small-area light sources, foremost being microLEDs. However, their use has been inhibited so far primarily due to fabrication and integration challenges, which impair efficiency and yield. Recently, bottom-up nanostructures grown using selective area epitaxy have garnerThe future of optoelectronics is directed towards small-area light sources, foremost being microLEDs. However, their use has been inhibited so far primarily due to fabrication and integration challenges, which impair efficiency and yield. Recently, bottom-up nanostructures grown using selective area epitaxy have garnered attention as a solution to the aforementioned issues. Prof. Lan Fu et. al. have used this technique to demonstrate uniform p-i-n core-shell InGaAs/InP nanowire array light emitting diodes. The devices are capable of voltage and geometry-controlled multi-wavelength and high-speed operations. Their publication accentuates the wide capabilities of bottom-up nanostructures to resolve the difficulties of nanoscale optoelectronics..
Opto-Electronic Advances
- Publication Date: Mar. 20, 2024
- Vol. 7, Issue 3, 240011-1 (2024)
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