Researching | On the relationship between imprint and reliability in Hf0.5Zr0.5O2 based ferroelectric random access memory

Journals >Journal of Semiconductors >Volume 45 >Issue 4 >Page 042301 > Article

Journal of Semiconductors
Vol. 45, Issue 4, 042301 (2024)

On the relationship between imprint and reliability in Hf_0.5Zr_0.5O₂ based ferroelectric random access memory

Peng Yuan, Yuting Chen, Liguo Chai, Zhengying Jiao, Qingjie Luan, Yongqing Shen, Ying Zhang, Jibin Leng, Xueli Ma^*, Jinjuan Xiang^**, Guilei Wang^***, and Chao Zhao

Author Affiliations

Beijing Superstring Academy of Memory Technology, Beijing 100176, China

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DOI: 10.1088/1674-4926/45/4/042301 Cite this Article

Peng Yuan, Yuting Chen, Liguo Chai, Zhengying Jiao, Qingjie Luan, Yongqing Shen, Ying Zhang, Jibin Leng, Xueli Ma, Jinjuan Xiang, Guilei Wang, Chao Zhao. On the relationship between imprint and reliability in Hf_0.5Zr_0.5O₂ based ferroelectric random access memory[J]. Journal of Semiconductors, 2024, 45(4): 042301 Copy Citation Text

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References

[1] M H Park, Y H Lee, H J Kim et al. Ferroelectricity and antiferroelectricity of doped thin HfO2-based films. Adv Mater, 27, 1811(2015).

[2] U Schroeder, M H Park, T Mikolajick et al. The fundamentals and applications of ferroelectric HfO2. Nat Rev Mater, 7, 653(2022).

[3] Z Fan, J S Chen, J Wang. Ferroelectric HfO2-based materials for next-generation ferroelectric memories. J Adv Dielect, 6, 1630003(2016).

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[7] A Sharma, K Roy. Design space exploration of hysteresis-free HfZrOx-based negative capacitance FETs. IEEE Electron Device Lett, 38, 1165(2017).

[8] J Okuno, T Kunihiro, K Konishi et al. 1T1C FeRAM memory array based on ferroelectric HZO with capacitor under bitline. IEEE J Electron Devices Soc, 10, 29(2021).

[9] T Francois, L Grenouillet, J Coignus et al. Demonstration of BEOL-compatible ferroelectric Hf0.5Zr0.5O2 scaled FeRAM co-integrated with 130nm CMOS for embedded NVM applications, 15.7. 1(2019).

[10] S H Kuk, S M Han, B H Kim et al. An investigation of HZO-based n/p-FeFET operation mechanism and improved device performance by the electron detrapping mode. IEEE Trans Electron Devices, 69, 2080(2022).

[11] Y Zhou, H K Chan, C H Lam et al. Mechanisms of imprint effect on ferroelectric thin films. J Appl Phys, 98, 024111(2005).

[12] P Yuan, G Q Mao, Y Cheng et al. Microscopic mechanism of imprint in hafnium oxide-based ferroelectrics. Nano Res, 15, 3667(2022).

[13] P F Jiang, Q Luo, X X Xu et al. Wake-up effect in HfO2-based ferroelectric films. Adv Elect Materials, 7, 2000728(2021).

[14] Y Zhou, Y K Zhang, Q Yang et al. The effects of oxygen vacancies on ferroelectric phase transition of HfO2-based thin film from first-principle. Comput Mater Sci, 167, 143(2019).

[15] Y Cheng, Z M Gao, K H Ye et al. Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin film. Nat Commun, 13, 645(2022).

[16] E D Grimley, T Schenk, X H Sang et al. Structural changes underlying field-cycling phenomena in ferroelectric HfO2 thin films. Adv Elect Materials, 2, 1600173(2016).

[17] A Sünbül, D Lehninger, M Lederer et al. A study on imprint behavior of ferroelectric hafnium oxide caused by high-temperature annealing. Phys Status Solidi A, 220, 2300067(2023).

[18] K Y Bao, J J Liao, F Yan et al. Enhanced endurance and imprint properties in Hf0.5Zr0.5O2–δ ferroelectric capacitors by tailoring the oxygen vacancy. ACS Appl Electron Mater, 5, 4615(2023).

[19] P Yuan, B P Wang, Y Yang et al. Enhanced remnant polarization (30 μC/cm2) and retention of ferroelectric Hf0.5Zr0.5O2 by NH3 plasma treatment. IEEE Electron Device Lett, 43, 1045(2022).

[20] B W Nie, Y Q Huang, Y Wang et al. Thermal induced Pr degradation under low-voltage operation in HfZrO ferroelectric film: Phenomenon and underlying mechanism. IEEE Electron Device Lett, 44, 1456(2023).

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Peng Yuan, Yuting Chen, Liguo Chai, Zhengying Jiao, Qingjie Luan, Yongqing Shen, Ying Zhang, Jibin Leng, Xueli Ma, Jinjuan Xiang, Guilei Wang, Chao Zhao. On the relationship between imprint and reliability in Hf_0.5Zr_0.5O₂ based ferroelectric random access memory[J]. Journal of Semiconductors, 2024, 45(4): 042301

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