• Chip
  • Vol. 3, Issue 3, 100101 (2024)
Ming-Hao Shao1、†, Rui-Ting Zhao1、†, Houfang Liu†、*, Wen-Jia Xu, Yi-Da Guo, Da-Peng Huang, Yu-Zhe Yang, Xin-Ru Li, Wancheng Shao, Peng-Hui Shen, Junwei Liu, Kuanmao Wang, Jinguo Zheng, Zhao-Yi Yan, Jian-Lan Yan, Tian Lu, Yi Yang, and Tian-Ling Ren**
Author Affiliations
  • School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
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    DOI: 10.1016/j.chip.2024.100101 Cite this Article
    Ming-Hao Shao, Rui-Ting Zhao, Houfang Liu, Wen-Jia Xu, Yi-Da Guo, Da-Peng Huang, Yu-Zhe Yang, Xin-Ru Li, Wancheng Shao, Peng-Hui Shen, Junwei Liu, Kuanmao Wang, Jinguo Zheng, Zhao-Yi Yan, Jian-Lan Yan, Tian Lu, Yi Yang, Tian-Ling Ren. Challenges and recent advances in HfO2-based ferroelectric films for non-volatile memory applications[J]. Chip, 2024, 3(3): 100101 Copy Citation Text show less

    Abstract

    The emergence of data-centric applications such as artificial intelligence (AI), machine learning, and the Internet of Things (IoT), has promoted surges in demand for storage memories with high operating speed and nonvolatile characteristics. HfO2-based ferroelectric memory technologies, which emerge as a promising alternative, have attracted considerable attention due to their high performance, energy efficiency, and full compatibility with the standard complementary metal-oxide-semiconductors (CMOS) process. These nonvolatile storage elements, such as ferroelectric random access memory (FeRAM), ferroelectric field-effect transistors (FeFETs), and ferroelectric tunnel junctions (FTJs), possess different data access mechanisms, individual merits, and specific application boundaries in next-generation memories or even beyond von Neumann architecture. This paper provides an overview of ferroelectric HfO2 memory technologies, addresses the current challenges, and offers insights into future research directions and prospects.
    Ming-Hao Shao, Rui-Ting Zhao, Houfang Liu, Wen-Jia Xu, Yi-Da Guo, Da-Peng Huang, Yu-Zhe Yang, Xin-Ru Li, Wancheng Shao, Peng-Hui Shen, Junwei Liu, Kuanmao Wang, Jinguo Zheng, Zhao-Yi Yan, Jian-Lan Yan, Tian Lu, Yi Yang, Tian-Ling Ren. Challenges and recent advances in HfO2-based ferroelectric films for non-volatile memory applications[J]. Chip, 2024, 3(3): 100101
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