Two kinds of Cu2ZnSnSe4(CZTSe) precursor layers were prepared by magnetron sputtering SnSe-ZnSe-Cu targets and metal Sn-Zn-Cu targets, respectively. The CZTSe absorber layers based on two kinds of precursors were prepared by using the same selenization process. The crystallization, phase purity, surface and section morphology and elemental constituents of CZTSe film were investigated by X-ray diffraction (XRD), Raman microscopy(Raman), scanning electron microscope (SEM) and energy dispersive spectrometer (EDS), respectively. It was found that the CZTSe adsorption layer film with more flat and dense surface as well as without any obvious holes were obtained by sputtering selenide targets. The electrical properties of solar cell films were characterized by Hall system and J-V testing. The results show that the current density and conversion efficiency of the CZTSe solar cells based on selenide targets are higher than that of CZTSe solar cells from metal element targets. The CZTSe thin film solar cells based on metal element targets obtain a photoelectric conversion efficiency of 2.18% with an open circuit voltage of 356 mV and a short circuit current density of 20.61 mA/cm2, while the photoelectric conversion efficiency of CZTSe thin film solar cells prepared by selenide targets is 3.33% with an open circuit voltage of 354 mV and a short circuit current density of 28.41 mA/cm2.