• Semiconductor Optoelectronics
  • Vol. 45, Issue 1, 49 (2024)
WANG Quantian1, GONG Min1, and ZHANG Sijie1、2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.16818/j.issn1001-5868.2023102802 Cite this Article
    WANG Quantian, GONG Min, ZHANG Sijie. Optoelectronic Artificial Synapse with Ferroelectric Material for Logical Functions and Modulation of Visual Memory[J]. Semiconductor Optoelectronics, 2024, 45(1): 49 Copy Citation Text show less

    Abstract

    The use of devices that emulate biological synapses has gained recognition as a highly suitable alternative to the Von Neumann architecture. Artificial retinal devices provide advantageous contributions to the modeling of machine vision and image recognition. The goal of this research is to create artificial synaptic devices that are light-activated. This is achieved by using poly (vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) as the ferroelectric layer and copper phthalocyanine(CuPc) as the semiconductor film. The researchers performed experiments aimed at replicating synapses, resulting in the generation of excitatory postsynaptic currents (EPSC), which allowed them to observe the synaptic plasticity characteristics and simulate memory responses to optical inputs. The experimental findings demonstrate that the polarization state of a ferroelectric material is influenced by the gate voltage, leading to a modulation of the decay rate of the photoresponsive current. The implementation of a high-pass filtering function was successfully accomplished. This device also enabled the realization of ‘AND’ and ‘OR’ Boolean logic functions by using gate voltage and light illumination as dual input logic signals.
    WANG Quantian, GONG Min, ZHANG Sijie. Optoelectronic Artificial Synapse with Ferroelectric Material for Logical Functions and Modulation of Visual Memory[J]. Semiconductor Optoelectronics, 2024, 45(1): 49
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