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Journals >Chip >Volume 3 >Issue 3 >Page 100105 > Article

Chip
Vol. 3, Issue 3, 100105 (2024)

Electrical performance and reliability analysis of vertical gallium nitride Schottky barrier diodes with dual-ion implanted edge termination

Bo Li¹, Jinpei Lin¹, Linfei Gao¹, Zhengweng Ma¹, Huakai Yang¹, Zhihao Wu¹, Hsien-Chin Chiu², Hao-Chung Kuo³, Chunfu Zhang⁴, Zhihong Liu⁴, Shuangwu Huang¹, Wei He¹, and Xinke Liu^1、*

Author Affiliations

¹College of Materials Science and Engineering, College of Electronics and Information Engineering, Institute of Microelectronics (IME), Guangdong Research Center for Interfacial Engineering of Functional Materials, State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, China

²Department of Electronic Engineering, Chang Gung University, Taoyuan 333, China

³Department of Photonics and the Institute of Electro-Optical Engineering, and with Foxconn Semiconductor Research Institute, National Chiao Tung University, Hsinchu 300, China

⁴Xidian University, School of Microelectronics, Xi'an 710071, China

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DOI: 10.1016/j.chip.2024.100105 Cite this Article

Bo Li, Jinpei Lin, Linfei Gao, Zhengweng Ma, Huakai Yang, Zhihao Wu, Hsien-Chin Chiu, Hao-Chung Kuo, Chunfu Zhang, Zhihong Liu, Shuangwu Huang, Wei He, Xinke Liu. Electrical performance and reliability analysis of vertical gallium nitride Schottky barrier diodes with dual-ion implanted edge termination[J]. Chip, 2024, 3(3): 100105 Copy Citation Text

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References

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Bo Li, Jinpei Lin, Linfei Gao, Zhengweng Ma, Huakai Yang, Zhihao Wu, Hsien-Chin Chiu, Hao-Chung Kuo, Chunfu Zhang, Zhihong Liu, Shuangwu Huang, Wei He, Xinke Liu. Electrical performance and reliability analysis of vertical gallium nitride Schottky barrier diodes with dual-ion implanted edge termination[J]. Chip, 2024, 3(3): 100105

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