Kai Huang, Tingting Zeng, Jianda Shao, Meiping Zhu. Research Progress on Surface Contamination and Cleaning Techniques of Extreme Ultraviolet Multilayer Coatings[J]. Laser & Optoelectronics Progress, 2025, 62(1): 0100001
- Laser & Optoelectronics Progress
- Vol. 62, Issue 1, 0100001 (2025)
![Scanning electron micrographs of Rh sample exposed to Sn thermal vapor at room temperature[10]. (a) Exposure dose of 2.5×1015 cm-2; (b) exposure dose of 3.5×1016 cm-2](/richHtml/lop/2025/62/1/0100001/img_01.jpg)
Fig. 1. Scanning electron micrographs of Rh sample exposed to Sn thermal vapor at room temperature[10]. (a) Exposure dose of 2.5×1015 cm-2; (b) exposure dose of 3.5×1016 cm-2
![Abundance of ion kinetic energy[11]](/richHtml/lop/2025/62/1/0100001/img_02.jpg)
Fig. 2. Abundance of ion kinetic energy[11]
Fig. 3. Temporal and spatial characteristics of LPP light source[18]. (a) Temporal view of laser pulses used to produce EUV; (b) spatial view of target formation and EUV generation process
Fig. 4. Concept of magnetic debris mitigation scheme[25]
Fig. 5. Photograph of the inner side of an experimental chamber in which a low pressure (argon) gas is irradiated with a pulsed beam of EUV photons[34](blueish glow at the position where the EUV beam travels indicates the interaction between the EUV photons and the gas)
Fig. 6. Circuit diagram of the plasma source setup[38]
Fig. 7. Change in tin cleaning rate along the radius of discharge electrode[44]
Fig. 8. Illustration of temperature-dependent allotropic transformation between α-phase gray tin and β-phase white tin[48]
Fig. 9. Adsorption, diffusion, and dissociation of large hydrocarbons into a graphitic-like, but partially hydrogenated, layer by EUV radiation or secondary electrons[64]
Fig. 10. Ternary phase diagram of bonding in amorphous carbon-hydrogen alloys[65]
Fig. 11. Process of chemical reaction mechanism[73]
Fig. 12. Atomic hydrogen annealing apparatus[80]. (a) Principle diagram; (b) internal photograph
Fig. 13. Model of degradation of the Mo/Si multilayer under EUV radiation[88]
Fig. 14. Relationship between reflectivity and thickness of capping layer[96]
Fig. 15. Experimental and simulated X-ray reflectivity (XRR) data[101]. (a) As-deposited sample; (b) sample annealed at 400 ℃ for 20 min (inset: layered model used in simulation)
Fig. 16. Schematic of degradation process in protective TiO2 film[106]. (a) Annealing test process of the thin film samples; (b) EUV irradiation process during LPP light source operation
Fig. 17. Low energy ion scattering spectra of ZrO2 layers grown on a Si (100) substrate with 5 nm amorphous silicon as the bottom layer[115]. (a) High-O ZrO2 layers (0.3‒3.4 nm); (b) low-O ZrO2 layers (0.3‒1.7 nm) (insets: magnified view of the Si peak and layered model of deposition structure)
Fig. 18. Production of void-free, self-limiting carbon layer from ethanol adsorption on a hydroxylated silicon surface of the Mo/Si multilayer[117]

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