• Laser & Optoelectronics Progress
  • Vol. 62, Issue 1, 0100001 (2025)
Kai Huang1、2、*, Tingting Zeng1, Jianda Shao1, and Meiping Zhu1、2
Author Affiliations
  • 1Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
  • 2College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
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    DOI: 10.3788/LOP242093 Cite this Article Set citation alerts
    Kai Huang, Tingting Zeng, Jianda Shao, Meiping Zhu. Research Progress on Surface Contamination and Cleaning Techniques of Extreme Ultraviolet Multilayer Coatings[J]. Laser & Optoelectronics Progress, 2025, 62(1): 0100001 Copy Citation Text show less
    Scanning electron micrographs of Rh sample exposed to Sn thermal vapor at room temperature[10]. (a) Exposure dose of 2.5×1015 cm-2; (b) exposure dose of 3.5×1016 cm-2
    Fig. 1. Scanning electron micrographs of Rh sample exposed to Sn thermal vapor at room temperature[10]. (a) Exposure dose of 2.5×1015 cm-2; (b) exposure dose of 3.5×1016 cm-2
    Abundance of ion kinetic energy[11]
    Fig. 2. Abundance of ion kinetic energy[11]
    Temporal and spatial characteristics of LPP light source[18]. (a) Temporal view of laser pulses used to produce EUV; (b) spatial view of target formation and EUV generation process
    Fig. 3. Temporal and spatial characteristics of LPP light source[18]. (a) Temporal view of laser pulses used to produce EUV; (b) spatial view of target formation and EUV generation process
    Concept of magnetic debris mitigation scheme[25]
    Fig. 4. Concept of magnetic debris mitigation scheme[25]
    Photograph of the inner side of an experimental chamber in which a low pressure (argon) gas is irradiated with a pulsed beam of EUV photons[34](blueish glow at the position where the EUV beam travels indicates the interaction between the EUV photons and the gas)
    Fig. 5. Photograph of the inner side of an experimental chamber in which a low pressure (argon) gas is irradiated with a pulsed beam of EUV photons[34](blueish glow at the position where the EUV beam travels indicates the interaction between the EUV photons and the gas)
    Circuit diagram of the plasma source setup[38]
    Fig. 6. Circuit diagram of the plasma source setup[38]
    Change in tin cleaning rate along the radius of discharge electrode[44]
    Fig. 7. Change in tin cleaning rate along the radius of discharge electrode[44]
    Illustration of temperature-dependent allotropic transformation between α-phase gray tin and β-phase white tin[48]
    Fig. 8. Illustration of temperature-dependent allotropic transformation between α-phase gray tin and β-phase white tin[48]
    Adsorption, diffusion, and dissociation of large hydrocarbons into a graphitic-like, but partially hydrogenated, layer by EUV radiation or secondary electrons[64]
    Fig. 9. Adsorption, diffusion, and dissociation of large hydrocarbons into a graphitic-like, but partially hydrogenated, layer by EUV radiation or secondary electrons[64]
    Ternary phase diagram of bonding in amorphous carbon-hydrogen alloys[65]
    Fig. 10. Ternary phase diagram of bonding in amorphous carbon-hydrogen alloys[65]
    Process of chemical reaction mechanism[73]
    Fig. 11. Process of chemical reaction mechanism[73]
    Atomic hydrogen annealing apparatus[80]. (a) Principle diagram; (b) internal photograph
    Fig. 12. Atomic hydrogen annealing apparatus[80]. (a) Principle diagram; (b) internal photograph
    Model of degradation of the Mo/Si multilayer under EUV radiation[88]
    Fig. 13. Model of degradation of the Mo/Si multilayer under EUV radiation[88]
    Relationship between reflectivity and thickness of capping layer[96]
    Fig. 14. Relationship between reflectivity and thickness of capping layer[96]
    Experimental and simulated X-ray reflectivity (XRR) data[101]. (a) As-deposited sample; (b) sample annealed at 400 ℃ for 20 min (inset: layered model used in simulation)
    Fig. 15. Experimental and simulated X-ray reflectivity (XRR) data[101]. (a) As-deposited sample; (b) sample annealed at 400 ℃ for 20 min (inset: layered model used in simulation)
    Schematic of degradation process in protective TiO2 film[106]. (a) Annealing test process of the thin film samples; (b) EUV irradiation process during LPP light source operation
    Fig. 16. Schematic of degradation process in protective TiO2 film[106]. (a) Annealing test process of the thin film samples; (b) EUV irradiation process during LPP light source operation
    Low energy ion scattering spectra of ZrO2 layers grown on a Si (100) substrate with 5 nm amorphous silicon as the bottom layer[115]. (a) High-O ZrO2 layers (0.3‒3.4 nm); (b) low-O ZrO2 layers (0.3‒1.7 nm) (insets: magnified view of the Si peak and layered model of deposition structure)
    Fig. 17. Low energy ion scattering spectra of ZrO2 layers grown on a Si (100) substrate with 5 nm amorphous silicon as the bottom layer[115]. (a) High-O ZrO2 layers (0.3‒3.4 nm); (b) low-O ZrO2 layers (0.3‒1.7 nm) (insets: magnified view of the Si peak and layered model of deposition structure)
    Production of void-free, self-limiting carbon layer from ethanol adsorption on a hydroxylated silicon surface of the Mo/Si multilayer[117]
    Fig. 18. Production of void-free, self-limiting carbon layer from ethanol adsorption on a hydroxylated silicon surface of the Mo/Si multilayer[117]
    Kai Huang, Tingting Zeng, Jianda Shao, Meiping Zhu. Research Progress on Surface Contamination and Cleaning Techniques of Extreme Ultraviolet Multilayer Coatings[J]. Laser & Optoelectronics Progress, 2025, 62(1): 0100001
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