• Journal of Advanced Dielectrics
  • Vol. 14, Issue 6, 2450004 (2024)
Chao Li1、*, Yijun Zhang2, Guohua Dong2, Guangliang Hu2, Guang Yang2, Chaoqiang Liu3, Houwen Chen3, and Xiaoyong Wei2
Author Affiliations
  • 1Instrumental Analysis Center,Xi’an Jiaotong University,Xi’an 710049,P. R. China
  • 2Electronic Materials Research Laboratory,Key Laboratory of The Ministry of Education & International,Center for Dielectric Research,Xi’an Jiaotong University,Xi’an 710049,P. R. China
  • 3College of Materials Science and Engineering & Electron Microscopy Center of Chongqing University,Chongqing 400044,P. R. China
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    DOI: 10.1142/S2010135X24500048 Cite this Article
    Chao Li, Yijun Zhang, Guohua Dong, Guangliang Hu, Guang Yang, Chaoqiang Liu, Houwen Chen, Xiaoyong Wei. Atomic resolution microstructure study of Bi-doped SrTiO3[J]. Journal of Advanced Dielectrics, 2024, 14(6): 2450004 Copy Citation Text show less

    Abstract

    Intrinsic SrTiO3 is a quantum paraelectric,but moderately Bi-doped SrTiO3 exhibits dielectric frequency dispersion similar to relaxor ferroelectrics. In this paper,detailed electron microscopic studies of the microstructures of Bi-doped SrTiO3 samples were presented. It was found that the Sr sites were replaced by off-central Bi,resulting in tensile strain in the strontium titanate (STO) lattice. In the Bi-doped SrTiO3 samples,the valence of titanium mainly showed the Ti4+ characteristic. According to the dielectric behavior and microstructure analysis,the polar nanoregions (PNRs) composed of strained SrTiO3 nanoclusters should be responsible for the ferroelectric relaxor behavior in samples with moderate Bi content.
    Chao Li, Yijun Zhang, Guohua Dong, Guangliang Hu, Guang Yang, Chaoqiang Liu, Houwen Chen, Xiaoyong Wei. Atomic resolution microstructure study of Bi-doped SrTiO3[J]. Journal of Advanced Dielectrics, 2024, 14(6): 2450004
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