Research Progress of a⁃IGZO TFT Based on Dual⁃active Layer

Yanmei LUO; Zhoushuo CHU; Jian WANG; Ke HU; Botao SUN

doi:10.19453/j.cnki.1005-488x.2021.01.013

Journals >Optoelectronic Technology >Volume 41 >Issue 1 >Page 70 > Article

Optoelectronic Technology
Vol. 41, Issue 1, 70 (2021)

Research Progress of a⁃IGZO TFT Based on Dual⁃active Layer

Yanmei LUO, Zhoushuo CHU, Jian WANG, Ke HU, and Botao SUN

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[in Chinese]

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DOI: 10.19453/j.cnki.1005-488x.2021.01.013 Cite this Article

Yanmei LUO, Zhoushuo CHU, Jian WANG, Ke HU, Botao SUN. Research Progress of a⁃IGZO TFT Based on Dual⁃active Layer[J]. Optoelectronic Technology, 2021, 41(1): 70 Copy Citation Text

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Abstract

The research progress of a-IGZO was reviewed ， as well as the high stability mechanism， preparation process， the element ratio between two layers， adulteration method and process parameters. In addition， the effect of dual-active layer on TFT's properties and the improved methods were comprehensively and thoroughly analyzed. Then， the future direction of a-IGZO technology was prospected.

Keywords

a-IGZO dual-active layer thin film transistor

Yanmei LUO, Zhoushuo CHU, Jian WANG, Ke HU, Botao SUN. Research Progress of a⁃IGZO TFT Based on Dual⁃active Layer[J]. Optoelectronic Technology, 2021, 41(1): 70

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