• Journal of Semiconductors
  • Vol. 45, Issue 12, 122501 (2024)
Yi Huang, Qiurui Chen, Rongyao Ma, Kaifeng Tang, Qi Wang, Hongsheng Zhang, Ji Ding, Dandan Xu, Sheng Gao*, and Genquan Han
Author Affiliations
  • School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
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    DOI: 10.1088/1674-4926/24060009 Cite this Article
    Yi Huang, Qiurui Chen, Rongyao Ma, Kaifeng Tang, Qi Wang, Hongsheng Zhang, Ji Ding, Dandan Xu, Sheng Gao, Genquan Han. Short-circuit failure modes and mechanism investigation of 1200 V planar SiC MOSFETs[J]. Journal of Semiconductors, 2024, 45(12): 122501 Copy Citation Text show less
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    [9] C B Lin, J P Wu, H Y Xu et al. Comparison and analysis of short circuit performance of 1200V SiC MOSFETs. 2020 17th China International Forum on Solid State Lighting & 2020 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS), 81(2020).

    [10] X T Zhou, H Y Su, Y Wang et al. Investigations on the degradation of 1.2-kV 4H-SiC MOSFETs under repetitive short-circuit tests. IEEE Trans Electron Devices, 63, 4346(2016).

    [11] H Du, P Diaz Reigosa, L Ceccarelli et al. Impact of repetitive short-circuit tests on the normal operation of SiC MOSFETs considering case temperature influence. IEEE J Emerg Sel Top Power Electron, 8, 195(2020).

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    [15] J J An, M Namai, H Yano et al. Methodology for enhanced short-circuit capability of SiC MOSFETs. 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 391(2018).

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    Yi Huang, Qiurui Chen, Rongyao Ma, Kaifeng Tang, Qi Wang, Hongsheng Zhang, Ji Ding, Dandan Xu, Sheng Gao, Genquan Han. Short-circuit failure modes and mechanism investigation of 1200 V planar SiC MOSFETs[J]. Journal of Semiconductors, 2024, 45(12): 122501
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