• Frontiers of Optoelectronics
  • Vol. 17, Issue 2, 12200 (2024)
Chen Zhou1、2, Xiwen He2, Mingyue Xiao2, Deyue Ma2, Weibiao Chen2, and Zhiping Zhou2、3、*
Author Affiliations
  • 1School of Physical Sciences, University of Science and Technology of China, Hefei 230026, China
  • 2Aerospace Laser Technology and System Department,Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
  • 3Hangzhou Aijie Optoelectronic Technology Co. Ltd.,Hangzhou 311400, China
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    DOI: 10.1007/s12200-024-00118-2 Cite this Article
    Chen Zhou, Xiwen He, Mingyue Xiao, Deyue Ma, Weibiao Chen, Zhiping Zhou. Design of an on-chip wavelength conversion device assisted by an erbium-ytterbium co-doped waveguide amplifier[J]. Frontiers of Optoelectronics, 2024, 17(2): 12200 Copy Citation Text show less

    Abstract

    In current documented studies, it has been observed that wavelength converters utilizing AlGaAsOI waveguides exhibitsuboptimal on-chip wavelength conversion efficiency from the C-band to the 2 μm band, generally falling below -20.0 dB.To address this issue, we present a novel wavelength conversion device assisted by a waveguide amplifier, incorporating bothAlGaAs wavelength converter and erbium-ytterbium co-doped waveguide amplifier, thereby achieving a notable conversionefficiency exceeding 0 dB. The noteworthy enhancement in efficiency can be attributed to the specific dispersion design ofthe AlGaAs wavelength converter, which enables an upsurge in conversion efficiency to -15.54 dB under 100 mW of pumppower. Furthermore, the integration of an erbium-ytterbium co-doped waveguide amplifier facilitates a loss compensationof over 15 dB. Avoiding the use of external optical amplifiers, this device enables efficient and high-bandwidth wavelengthconversion, showing promising applications in various fields, such as optical communication, sensing, imaging, and beyond.
    Chen Zhou, Xiwen He, Mingyue Xiao, Deyue Ma, Weibiao Chen, Zhiping Zhou. Design of an on-chip wavelength conversion device assisted by an erbium-ytterbium co-doped waveguide amplifier[J]. Frontiers of Optoelectronics, 2024, 17(2): 12200
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