A kinetic Monte Carlo model has been developed to study mechanism of growth patterns on 3C-SiC(111) vicinal surface. The growth temperature, deposition rate and terrace width have great influence on the growth mechanism of the vicinal surface. The simulation result show that many islands are nucleated on the vicinal surface at low temperature and the crystal grows mainly by island nucleation. When the temperature increases, the islands are distribute in the edge of steps. As a result, the growth patterns are changed to mixed growth patterns. Secondly, the growth patterns are dominated by step flow growth at low deposition rate and two-dimensional nucleation growth regimes are dominated as the deposition rate increases. Finally, with the terrace width decreases adatoms preferentially attach to steps instead of nucleating new islands and the growth system crosses over from nucleation-dominated growth to step flow-dominated growth models.