• Photonics Research
  • Vol. 13, Issue 2, 286 (2025)
Longxing Su1、2、*, Bingheng Meng3, Heng Li2, Zhuo Yu2, Yuan Zhu2、5, and Rui Chen4、6
Author Affiliations
  • 1International School of Microelectronics, Dongguan University of Technology, Dongguan 523808, China
  • 2School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, China
  • 3State Key Laboratory of High Power Semiconductor Laser, School of Physics, Changchun University of Science and Technology, Changchun 130022, China
  • 4Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China
  • 5e-mail: zhuy3@sustech.edu.cn
  • 6e-mail: chenr@sustech.edu.cn
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    DOI: 10.1364/PRJ.539352 Cite this Article Set citation alerts
    Longxing Su, Bingheng Meng, Heng Li, Zhuo Yu, Yuan Zhu, Rui Chen, "Amplified spontaneous emission and photoresponse characteristics in highly defect tolerant CsPbClxBr3−x crystal," Photonics Res. 13, 286 (2025) Copy Citation Text show less

    Abstract

    All inorganic perovskite CsPbX3 with excellent optical properties and a tunable bandgap is a potential candidate for optoelectronic applications, and the amplified spontaneous emission (ASE) is normally reported in low-dimensional structures where the quantum confinement enhances ASE. Herein, we not only demonstrate the ASE in millimeter size CsPbClxBr3-x crystal with a high defect concentration, but also tune the emission wavelength from the green band to blue band through the ion exchange of Br with Cl. The ASE centered at 456 nm is probed at 50 K with a threshold of 106 μJ/cm2. Furthermore, a metal-semiconductor-metal (MSM) structure CsPbClxBr3-x photodetector is fabricated and shows a distinct response to lights from UV to the blue band; the response spectrum range is quite different from the narrow band (30 nm) response of the CsPbBr3 photodetector induced by a charge collection narrowing (CCN) mechanism. The CsPbClxBr3-x photodetector also exhibits fast response speeds with a rise time of 96 μs and a decay time of 34 μs, indicating the defects have limited influence on the transportation speed of the photo-generated carriers.
    Eg(T)=E(0)(γ×T2)/(β+T),

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    Longxing Su, Bingheng Meng, Heng Li, Zhuo Yu, Yuan Zhu, Rui Chen, "Amplified spontaneous emission and photoresponse characteristics in highly defect tolerant CsPbClxBr3−x crystal," Photonics Res. 13, 286 (2025)
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