Research advances in optoelectronic devices of quantum dot-polymer nanocomposites

Xingfan Chen; Bin Li; Xueming Li; Libin Tang

doi:10.3788/IRLA20210637

Journals >Infrared and Laser Engineering >Volume 51 >Issue 5 >Page 20210637 > Article

Infrared and Laser Engineering
Vol. 51, Issue 5, 20210637 (2022)

Research advances in optoelectronic devices of quantum dot-polymer nanocomposites

Xingfan Chen^1、2、3, Bin Li^1、2、3, Xueming Li^1、*, and Libin Tang^2、3、*

Author Affiliations

¹Key Laboratory of Advanced Technique & Preparation for Renewable Energy Materials, Ministry of Education, School of Energy and Environmental Sciences, Yunnan Normal University, Kunming 650500, China

²Kunming Institute of Physics, Kunming 650223, China

³Yunnan Key Laboratory of Advanced Photoelectric Materials & Devices, Kunming 650223, China

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DOI: 10.3788/IRLA20210637 Cite this Article

Xingfan Chen, Bin Li, Xueming Li, Libin Tang. Research advances in optoelectronic devices of quantum dot-polymer nanocomposites[J]. Infrared and Laser Engineering, 2022, 51(5): 20210637 Copy Citation Text

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Preparation methods of quantum dots: (a) Molecular beam epitaxy; (b) Electrochemical method[12]; (c) Magnetron sputtering[32]; (d) Chemical vapor deposition[33]; (e) Hot injection method[34]; (f) Liquid phase ultrasonic method[12]

Fig. 1. Preparation methods of quantum dots: (a) Molecular beam epitaxy; (b) Electrochemical method^[12]; (c) Magnetron sputtering^[32]; (d) Chemical vapor deposition^[33]; (e) Hot injection method^[34]; (f) Liquid phase ultrasonic method^[12]

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Schematic diagram of composite preparation methods: (a) Microemulsion method; (b) In-situ polymerization method; (c) Sol-gel method; (d) Blending method

Fig. 2. Schematic diagram of composite preparation methods: (a) Microemulsion method; (b) In-situ polymerization method; (c) Sol-gel method; (d) Blending method

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Fig. 3. Device development process based on quantum dot-polymer nanocomposites

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Fig. 4. (a) Schematic of fabricating CQDs microlaser based on the inkjet printing technique^[84]; (b) QD-WLED structure diagram^[85]; (c) ZnO light-emitting diode device structure diagram^[86]; (d) Device structure with a combined backlight unit using a blue LED chip^[87]; (e) Structure diagram of QLED device prepared by QD/ PTPA-B-CAA^[88]; (f) CPB@SHFW composites structural diagram, upper right illustration is LED^[89]; (g) Structure diagram of white LED prepared by hybrid microspheres of C_SPbBr₃-P QDs and mesoporous polystyrene (MPMs) coated with SiO₂, the inset is a digital photo of the device taken at 10 mA^[26]; (h) Energy band structure diagram of QLED hybrid emitting layer prepared by QD/ PTPA-B-CAA^[88]; (i) Variation of PLQY of CPB@SHFW composite powder with time in water (illustration: material soaked in water for 31 days)^[89]

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Fig. 5. Photoelectric detector: (a) Device of Au/CND_S/n-Si ultraviolet photoelectric detector^[93]; (b) N-GQDs photodetector schematic diagram^[93]; (c) Typical Si-QD/Graphene /Si photodetector^[93]; (d) Si NWs array /CuO heterostructure photodetector^[93]; (e) Device structure of the PMDTC ligand^[94]; (f) Schematic diagram of ZnO/P3 HT:PVK photodetector structure, the BCP layer is a composite layer of Quantum dots and polymer^[95]; (g) CdTe and P3 HT photodetector structure^[96]; (h) J-V curve of the device under light irradiation. Higher photocurrent density was observed under reverse bias^[94]; (i) Description of 1 the generation, 2 splitting, 3 hole transport, and electron capture processes of electron-hole pairs in quantum dot polymer composites^[95]

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Materials	Wavelength/nm	Size/nm	Peak/nm	Photoluminescence quantum yield	Ref.
CdS	/	3.5	505	50%	[18]
CsPbI₃	/	11-16	673-692	100%	[19]
ZrS₂	240-360	3	379-454	53.3%	[20]
MA₃Bi₂Br₉	254	3.05	360-540	12%	[21]
MA₃Bi₂Cl₉	254	2-4	360	15%	[21]
CoTe₂	300-400	3.1	400-448	62.6%	[13]
Sb₂Te₃	300-600	2.3	400-450	/	[2]
ReS₂	320-440	2.7	420-490	75.6%	[22]
N-Ti₃C₂	360	3.4	447	18.7%	[23]
ZnSeTe	422-500	5.3	460	75%	[24]
CdTe	480	2.3-2.7	/	80%	[25]
CsPbBr₃	480	10	/	93%	[26]
WO₃−WS₂	600	0.8-2.1	630	11.6%	[27]
CdSe	600-650	4	/	97%	[28]
PbS	785	6-10	700-1 600	26%	[29]
Si	825	4	/	90%	[30]
PbTe	870	5-16	700-1 000	42%	[31]
InP/ZnS	1 200	2.1-4.1	480-590	68%	[5]

Table 1. Common quantum dot materials

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Materials	Preparation method	Wavelength/nm	Size/nm	Peak/nm	Quantum dot content/wt%	Photoluminescence quantum yield	Ref.
CdTe/PMMA	Thermal evaporation	/	2.21-3.42	538-584	6.1	13.5%	[40]
Si/PMMA	Doctor blading	/	100	750	0-3.3	35%	[41]
PbSe/PVA	Solution casting	200-800	2.1	1110	5	/	[42]
SnO₂/ PCz(Polycarbazole)	In-situ chemical polymerization	320-550	15-20	410-422	5-20	/	[43]
N-CQD/MIPs(Molecularly Imprinted Polymer)	Sol-gel	330	3.2-4.9	431	/	/	[44]
MAPbBr₃/PMMA	In-situ polymerization	350	4	543	/	88%	[45]
GQD/PVA	Solution casting	350-650	500	/	10	/	[46]
CdSe/PS	Colloidal synthesis	360-370	400-500	510-570	/	/	[47]
CDs/b-PEI(Branched Polyethylenimine)	one-step hydrothermal	365	30-50	508-528	/	90.49%	[48]
CdTe/WPU(Waterborne Polyurethane)	Casting and Evaporating	373	2.5-4.1	528-665	0.3	18%	[49]
TiO₂/Acrylate	UV polymerization	393	150	530	0.1	/	[50]
InP@GaP/ZnS/PDMS	SAM Encapsulating	400-700	/	527	10	/	[51]
PbSe/PDTPBT(Poly(2,6-(N-(1-octylnonyl)dithieno[3,2-b:20,30-d]pyrrole)-alt-4,7-(2,1,3-benzothiadiazole)))	Ligand exchange	400-900	150	700-800	0.9	/	[52]
Sb₂S₃/PMMA	One-pot synthesis	450	/	645	9	20%	[35]
CsPbBr₃/PS	In-situ photoactivated polymerization	450-650	/	530	0.2	44%	[39]
MAPbBr₃ /PDMS	Template	488	5.6-9.8	528	30	10%	[53]
ZnS/MQ(5-(2-methacryloylethyloxymethyl)- 8-quinolinol)	In-situ polymerization	495	3	500	/	40%	[54]
WS₂/PVA	Liquid phase exfoliation	532	60-120	617	/	/	[55]
C/PS	Solvatothermal	800	12-35	410-580	0.4	22%	[56]
CeF₃/PS	Solution casting	975	27-57	1530	10	/	[57]

Table 2. Commonly used quantum dot-polymer nanocomposites

Xingfan Chen, Bin Li, Xueming Li, Libin Tang. Research advances in optoelectronic devices of quantum dot-polymer nanocomposites[J]. Infrared and Laser Engineering, 2022, 51(5): 20210637

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