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Optoelectronics|66 Article(s)
Wearable self-driven (In,Ga)N sensor for biosensing application
Siyu Hu, Binbin Hou, Jianya Zhang, Yonglin Huang, and Yukun Zhao
Because of extensive potential applications in health fields, wearable self-driven sensors are indispensable for next-generation medical systems. In this paper, a wearable self-driven sensor utilizing a lift-off (In,Ga)N film is proposed and demonstrated successfully. (In,Ga)N film is separated from an epitaxial silicon substrate through an economical and fast electrochemical etching procedure. With good flexibility, the self-driven sensor can continuously monitor localized sweat and sweat electrolyte concentrations. Hence, it can monitor the electrolyte loss in the human body, which is crucial to facilitate proper fluid replenishment for people during exercise. Furthermore, the sensor maintains stable detection performance under different bending conditions, indicating good stability. Therefore, this study holds great potential for the advancement of wearable devices for personalized health management requiring ultra-low energy consumption. Because of extensive potential applications in health fields, wearable self-driven sensors are indispensable for next-generation medical systems. In this paper, a wearable self-driven sensor utilizing a lift-off (In,Ga)N film is proposed and demonstrated successfully. (In,Ga)N film is separated from an epitaxial silicon substrate through an economical and fast electrochemical etching procedure. With good flexibility, the self-driven sensor can continuously monitor localized sweat and sweat electrolyte concentrations. Hence, it can monitor the electrolyte loss in the human body, which is crucial to facilitate proper fluid replenishment for people during exercise. Furthermore, the sensor maintains stable detection performance under different bending conditions, indicating good stability. Therefore, this study holds great potential for the advancement of wearable devices for personalized health management requiring ultra-low energy consumption.
Chinese Optics Letters
- Publication Date: Jul. 14, 2025
- Vol. 23, Issue 8, 082502 (2025)
Size-dependent characteristics of GaN-based micro-LEDs for simultaneous display and wireless optical communication
Yuhang Dai, Zhou Wang, Shiting Dou, Siqi Yang, Junyuan Chen, Haoxiang Zhu, Yan Gu, Jin Wang, Hao Zhang, Yi Liu, Qiang Chen, and Xiaoyan Liu
Micro-light-emitting diode (micro-LED) has been widely concerned in the field of display and wireless optical communication due to its excellent optoelectronic characteristics, but the reduction of the pixel size has a significant impact on the performance of GaN-based micro-LEDs, which then affects the display and wireless optical communication applications. In this work, different sizes of violet and blue GaN-based micro-LEDs have been successfully fabricated, and the size-dependent characteristics of micro-LEDs in display and communication applications have been systematically studied. It can be found that the pixel size reduction of the micro-LEDs from 80 to 10 µm leads to an obvious decrease in light output power (LOP) by 88.30 % and 44.10 % for blue and violet micro-LEDs, respectively, and a decrease in peak external quantum efficiency (EQE) by 55.14 % and 46.25 % for blue and violet micro-LEDs, respectively. Additionally, micro-LEDs with smaller sizes tend to exhibit a less obvious shift of peak wavelength and smaller broadening of full-width at half-maximum (FWHM) with the increases of current density, showing the potential to achieve a stable display with high quality. Also, the influence of current density on chrominance coordinate migration is determined, which shows that the driving current density corresponding to the maximum EQE can promote display efficiency and color gamut. In addition, the violet and blue micro-LEDs with a diameter of 20 µm show potential in balancing between the LOP and the modulation bandwidth to achieve the highest data rates of 1.347 and 1.032 Gbps, respectively, in wireless optical communication applications. The results of this study are of great significance for optimizing the pixel size of the micro-LED to improve the performance in display and wireless optical communication applications in the future. Micro-light-emitting diode (micro-LED) has been widely concerned in the field of display and wireless optical communication due to its excellent optoelectronic characteristics, but the reduction of the pixel size has a significant impact on the performance of GaN-based micro-LEDs, which then affects the display and wireless optical communication applications. In this work, different sizes of violet and blue GaN-based micro-LEDs have been successfully fabricated, and the size-dependent characteristics of micro-LEDs in display and communication applications have been systematically studied. It can be found that the pixel size reduction of the micro-LEDs from 80 to 10 µm leads to an obvious decrease in light output power (LOP) by 88.30 % and 44.10 % for blue and violet micro-LEDs, respectively, and a decrease in peak external quantum efficiency (EQE) by 55.14 % and 46.25 % for blue and violet micro-LEDs, respectively. Additionally, micro-LEDs with smaller sizes tend to exhibit a less obvious shift of peak wavelength and smaller broadening of full-width at half-maximum (FWHM) with the increases of current density, showing the potential to achieve a stable display with high quality. Also, the influence of current density on chrominance coordinate migration is determined, which shows that the driving current density corresponding to the maximum EQE can promote display efficiency and color gamut. In addition, the violet and blue micro-LEDs with a diameter of 20 µm show potential in balancing between the LOP and the modulation bandwidth to achieve the highest data rates of 1.347 and 1.032 Gbps, respectively, in wireless optical communication applications. The results of this study are of great significance for optimizing the pixel size of the micro-LED to improve the performance in display and wireless optical communication applications in the future.
Chinese Optics Letters
- Publication Date: Jul. 14, 2025
- Vol. 23, Issue 8, 082501 (2025)
Optoelectronic neuro-synaptic behaviors of antiferroelectric NaNbO3/n-GaN heterostructures
Huijuan Dong, Kexin Jin and Bingcheng Luo
The development of artificial synaptic devices that emulate synaptic activity is key to advancing the hardware implementation of neuromorphic computing. In this study, we present an optoelectronic synaptic device based on a NaNbO3/n-GaN heterostructure, which exhibits defect-dominated carrier transport behaviors. This device effectively demonstrates typical synaptic functions, including paired-pulse facilitation, short-term memory, long-term memory, human cognitive behavior, and human visual memory, using both optical and electrical stimuli. These results highlight the potential of the NaNbO3/n-GaN heterostructure for future neuromorphic systems. The development of artificial synaptic devices that emulate synaptic activity is key to advancing the hardware implementation of neuromorphic computing. In this study, we present an optoelectronic synaptic device based on a NaNbO3/n-GaN heterostructure, which exhibits defect-dominated carrier transport behaviors. This device effectively demonstrates typical synaptic functions, including paired-pulse facilitation, short-term memory, long-term memory, human cognitive behavior, and human visual memory, using both optical and electrical stimuli. These results highlight the potential of the NaNbO3/n-GaN heterostructure for future neuromorphic systems.
Chinese Optics Letters
- Publication Date: May. 30, 2025
- Vol. 23, Issue 6, 062502 (2025)
High-performance broadband photodetectors based on b-As0.5P0.5 for infrared optical communication and imaging
Qianli Ma, Yiheng Li, Dawei He, Yongsheng Wang, and Yajie Yang
Infrared (IR) photodetectors (PDs) are crucial for medical imaging, optical communication, security surveillance, remote sensing, and gas identification. In this Letter, we systematically investigated a room temperature IR PD based on two-dimensional b-As0.5P0.5, a relatively unexplored component of b-AsP alloys. We synthesized high-quality b-As0.5P0.5 flakes via the chemical vapor transport (CVT) method with precisely controlled conditions. The fabricated b-As0.5P0.5 PD exhibits excellent photoconductivity, high responsivity, and a fast response in the visible and near-infrared (Vis-NIR) band. It achieves a responsivity of ∼0.209 A·W-1 and a response time of ∼16.6 µs under 1550 nm IR illumination. High-resolution single-pixel point optical imaging and high-speed optical communication were realized by the b-As0.5P0.5 PDs. This study confirms that b-As0.5P0.5 materials are highly promising for advanced IR optoelectronic applications. Infrared (IR) photodetectors (PDs) are crucial for medical imaging, optical communication, security surveillance, remote sensing, and gas identification. In this Letter, we systematically investigated a room temperature IR PD based on two-dimensional b-As0.5P0.5, a relatively unexplored component of b-AsP alloys. We synthesized high-quality b-As0.5P0.5 flakes via the chemical vapor transport (CVT) method with precisely controlled conditions. The fabricated b-As0.5P0.5 PD exhibits excellent photoconductivity, high responsivity, and a fast response in the visible and near-infrared (Vis-NIR) band. It achieves a responsivity of ∼0.209 A·W-1 and a response time of ∼16.6 µs under 1550 nm IR illumination. High-resolution single-pixel point optical imaging and high-speed optical communication were realized by the b-As0.5P0.5 PDs. This study confirms that b-As0.5P0.5 materials are highly promising for advanced IR optoelectronic applications.
Chinese Optics Letters
- Publication Date: May. 19, 2025
- Vol. 23, Issue 6, 062501 (2025)
Smoothed analysis-based noise manipulation for spatial photonic Ising machines
Xin Ye, Wenjia Zhang and Zuyuan He
The photonic Ising machine, a promising non-von Neumann computational paradigm, offers a feasible way to address combinatorial optimization problems. We develop a digital noise injection method for spatial photonic Ising machines based on smoothed analysis, where noise level acts as a parameter that quantifies the smoothness degree. Through experiments with 20736-node Max-Cut problems, we establish a stable performance within a smoothness degree of 0.04 to 0.07. Digital noise injection results in a 24% performance enhancement, showing a 73% improvement over heuristic Sahni–Gonzales (SG) algorithms. Furthermore, to address noise-induced instability concerns, we propose an optoelectronic co-optimization method for a more streamlined smoothing method with strong stability. The photonic Ising machine, a promising non-von Neumann computational paradigm, offers a feasible way to address combinatorial optimization problems. We develop a digital noise injection method for spatial photonic Ising machines based on smoothed analysis, where noise level acts as a parameter that quantifies the smoothness degree. Through experiments with 20736-node Max-Cut problems, we establish a stable performance within a smoothness degree of 0.04 to 0.07. Digital noise injection results in a 24% performance enhancement, showing a 73% improvement over heuristic Sahni–Gonzales (SG) algorithms. Furthermore, to address noise-induced instability concerns, we propose an optoelectronic co-optimization method for a more streamlined smoothing method with strong stability.
Chinese Optics Letters
- Publication Date: Mar. 13, 2025
- Vol. 23, Issue 3, 032501 (2025)
High-efficiency 8 × 8 superconducting nanowire single-photon detector array coupled with a 105-μm multimode fiber
Zhen Wan, Jia Huang, You Xiao, Chaomeng Ding, Huiqin Yu, Xiaofu Zhang, Xiaoyu Liu, Chaolin Lv, Hao Li, Lixing You, and Zhen Wang
We present an 8 × 8 superconducting nanowire single-photon detector (SNSPD) array that addresses the trade-off between detection efficiency and count rates in large-area devices. The SNSPD array employs a distributed nanowire architecture and a polarization-insensitive optical cavity, when coupled with a 105-µm multimode fiber, achieves a system detection efficiency of 75% at 1064 nm with a count rate of 945 MHz at 3 dB compression and an average timing jitter of <100 ps. This design offers a scalable solution for high-speed photon counting with large-area detection and multimode compatibility. We present an 8 × 8 superconducting nanowire single-photon detector (SNSPD) array that addresses the trade-off between detection efficiency and count rates in large-area devices. The SNSPD array employs a distributed nanowire architecture and a polarization-insensitive optical cavity, when coupled with a 105-µm multimode fiber, achieves a system detection efficiency of 75% at 1064 nm with a count rate of 945 MHz at 3 dB compression and an average timing jitter of <100 ps. This design offers a scalable solution for high-speed photon counting with large-area detection and multimode compatibility.
Chinese Optics Letters
- Publication Date: Nov. 06, 2025
- Vol. 23, Issue 12, 122501 (2025)
Tutorial on laser-based visible light communications [Invited]
Yuqi Hou, Yue Wang, Zengxin Li, Meixin Liu, Shulan Yi, Xiaoqian Wang, Liang Xia, Guangyi Liu, Jianyang Shi, Ziwei Li, Junwen Zhang, Nan Chi, Tien Khee Ng, Boon S. Ooi, and Chao Shen
Facing escalating demands for high-speed, large-bandwidth, and low-latency wireless data links, laser communication technology has emerged as a promising technology. While free-space optical communication conventionally utilizes near-infrared light sources, there has been growing interest in exploring new spectral resources, including visible lasers. Recently, laser-based white light has been demonstrated in visible light communication (VLC), with a unique capability to seamlessly integrate with illumination and display systems. This review summarizes the key devices and system technologies in semiconductor-laser-based white light for VLC-related applications. The recent advances and many emerging applications in the evolution of lighting, display, and communication are discussed. Facing escalating demands for high-speed, large-bandwidth, and low-latency wireless data links, laser communication technology has emerged as a promising technology. While free-space optical communication conventionally utilizes near-infrared light sources, there has been growing interest in exploring new spectral resources, including visible lasers. Recently, laser-based white light has been demonstrated in visible light communication (VLC), with a unique capability to seamlessly integrate with illumination and display systems. This review summarizes the key devices and system technologies in semiconductor-laser-based white light for VLC-related applications. The recent advances and many emerging applications in the evolution of lighting, display, and communication are discussed.
Chinese Optics Letters
- Publication Date: Aug. 29, 2024
- Vol. 22, Issue 9, 092502 (2024)
Versatile monolithic optoelectronic platform for bending angle sensing and visible light communication|Editors' Pick
Fan Shi, Chengxiang Jiang, Li Fang, Zhihang Sun, Jiabin Yan, Hongbo Zhu, and Yongjin Wang
In this Letter, a kind of optoelectronic chip based on III-nitride is developed as a versatile platform for both fiber-optic sensing and optical communication. The optoelectronic chip consists of a light-emitting diode (LED) and a photodiode (PD), which are fabricated with the same multi-quantum well (MQW) structure and monolithically integrated on a sapphire substrate. By integrating the chip with a polydimethylsiloxane (PDMS) encapsulated silica fiber-optic sensor, it can effectively detect the bending-induced light intensity change and generate the photocurrent to point out the angle changes. Besides, such an optoelectronic chip can also be treated as a transceiver, enabling duplex communication for real-time audio and video transmission. The proposed optoelectronic chip has the advantages of miniaturization, versatility, and ease of massive manufacturing, making it promising in integrated optical sensing and communication (IOSAC) systems. In this Letter, a kind of optoelectronic chip based on III-nitride is developed as a versatile platform for both fiber-optic sensing and optical communication. The optoelectronic chip consists of a light-emitting diode (LED) and a photodiode (PD), which are fabricated with the same multi-quantum well (MQW) structure and monolithically integrated on a sapphire substrate. By integrating the chip with a polydimethylsiloxane (PDMS) encapsulated silica fiber-optic sensor, it can effectively detect the bending-induced light intensity change and generate the photocurrent to point out the angle changes. Besides, such an optoelectronic chip can also be treated as a transceiver, enabling duplex communication for real-time audio and video transmission. The proposed optoelectronic chip has the advantages of miniaturization, versatility, and ease of massive manufacturing, making it promising in integrated optical sensing and communication (IOSAC) systems.
Chinese Optics Letters
- Publication Date: Sep. 13, 2024
- Vol. 22, Issue 9, 092501 (2024)
4 × 112 Gb/s hybrid integrated silicon receiver based on photonic-electronic co-design
Ye Jin, Yujun Xie, Zhihan Zhang, Donglai Lu, Menghan Yang, Ang Li, Xiangyan Meng, Yang Qu, Leliang Li, Nuannuan Shi, Wei Li, Ninghua Zhu, Nan Qi, and Ming Li
A 4 × 112 Gb/s hybrid-integrated optical receiver is demonstrated based on the silicon-photonic vertical p-i-n photodetector and silicon–germanium transimpedance amplifier. We propose a photonic-electronic co-design technique to optimize both the device-level and system-level performance, based on the end-to-end equivalent circuit model of the receiver. Continuous-time linear equalization and shunt peaking are employed to enhance the frequency response. Experimental results reveal that the optical-to-electrical 3-dB bandwidth of the receiver is 48 GHz. Clear open NRZ eye diagrams at 56 Gb/s and PAM-4 eye diagrams at 112 Gb/s are achieved without an equalizer in the oscilloscope. The measured bit error rates for 56 Gb/s in NRZ and 112 Gb/s in PAM-4 reach 1 × 10-12 and 2.4 × 10-4 (KP4-FEC: forward error correction) thresholds under -4 dBm input power, respectively. Furthermore, the proposed receiver boasts a power consumption of approximately 2.2 pJ/bit, indicating an energy efficient solution for data center traffic growth. A 4 × 112 Gb/s hybrid-integrated optical receiver is demonstrated based on the silicon-photonic vertical p-i-n photodetector and silicon–germanium transimpedance amplifier. We propose a photonic-electronic co-design technique to optimize both the device-level and system-level performance, based on the end-to-end equivalent circuit model of the receiver. Continuous-time linear equalization and shunt peaking are employed to enhance the frequency response. Experimental results reveal that the optical-to-electrical 3-dB bandwidth of the receiver is 48 GHz. Clear open NRZ eye diagrams at 56 Gb/s and PAM-4 eye diagrams at 112 Gb/s are achieved without an equalizer in the oscilloscope. The measured bit error rates for 56 Gb/s in NRZ and 112 Gb/s in PAM-4 reach 1 × 10-12 and 2.4 × 10-4 (KP4-FEC: forward error correction) thresholds under -4 dBm input power, respectively. Furthermore, the proposed receiver boasts a power consumption of approximately 2.2 pJ/bit, indicating an energy efficient solution for data center traffic growth.
Chinese Optics Letters
- Publication Date: Aug. 13, 2024
- Vol. 22, Issue 8, 082501 (2024)
Hetero-integrated high-peak-optical-power laser source (940 nm) for time-of-flight sensors
Sergey Olegovich Slipchenko, Aleksandr Aleksandrovich Podoskin, Ilia Vasil'evich Shushkanov, Marina Gennad'evna Rastegaeva, Artem Eduardovich Rizaev, Matvey Igorevich Kondratov, Artem Evgen'evich Grishin, Nikita Aleksandrovich Pikhtin, Timur Anatol'evich Bagaev, Maxim Anatol'evich Ladugin, Aleksandr Anatol'evich Marmalyuk, and Vladimir Aleksandrovich Simakov
The generation of high-power laser pulses using a compact hetero-integrated assembly based on a semiconductor laser with a dual-element composite 2 µm × 100 µm aperture and a compact heterothyristor switch is demonstrated. The achieved peak optical power was 33 W with a pulse duration of 3 ns at a thyristor operating voltage of 55 V. The leading edge of the laser pulse turn-on was 50 ps to a power level of 24.7 W, and the turn-on delay between the elements of the composite aperture was 160 ps. The generation of high-power laser pulses using a compact hetero-integrated assembly based on a semiconductor laser with a dual-element composite 2 µm × 100 µm aperture and a compact heterothyristor switch is demonstrated. The achieved peak optical power was 33 W with a pulse duration of 3 ns at a thyristor operating voltage of 55 V. The leading edge of the laser pulse turn-on was 50 ps to a power level of 24.7 W, and the turn-on delay between the elements of the composite aperture was 160 ps.
Chinese Optics Letters
- Publication Date: Jul. 15, 2024
- Vol. 22, Issue 7, 072501 (2024)
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