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Solar Energy and Photovoltaics|2 Article(s)
Time-resolved photoluminescence: a precision tool for shallow trap density determination in perovskite films
Wei Chen, Yifeng Shi, Pengxiang Wang, Guodong Zhang, Hu Wang, Yifan Zheng, and Yuchuan Shao
Determining the trap density in the absorbing layer thin film of perovskite solar cells is a critically important task, as it directly influences the efficiency of the devices. Here, we proposed time-resolved photoluminescence (TRPL) as a nondestructive method to assess trap density. A model was constructed to investigate carrier recombination and transition in perovskite materials. The model was utilized for numerical calculations and successfully fitted TRPL signals of perovskite materials. Furthermore, a genetic algorithm was employed to optimize the parameters. Finally, statistical methods were applied to obtain the parameters associated with the trap states of the material. This approach facilitates the successful determination of trap densities for different samples with clear differentiation. Determining the trap density in the absorbing layer thin film of perovskite solar cells is a critically important task, as it directly influences the efficiency of the devices. Here, we proposed time-resolved photoluminescence (TRPL) as a nondestructive method to assess trap density. A model was constructed to investigate carrier recombination and transition in perovskite materials. The model was utilized for numerical calculations and successfully fitted TRPL signals of perovskite materials. Furthermore, a genetic algorithm was employed to optimize the parameters. Finally, statistical methods were applied to obtain the parameters associated with the trap states of the material. This approach facilitates the successful determination of trap densities for different samples with clear differentiation.
Chinese Optics Letters
- Publication Date: Aug. 19, 2024
- Vol. 22, Issue 8, 084001 (2024)
Incorporation of Ag into Cu(In,Ga)Se2 films in low-temperature process
Zhaojing Hu, Yunxiang Zhang, Shuping Lin, Shiqing Cheng, Zhichao He, Chaojie Wang, Zhiqiang Zhou, Fangfang Liu, Yun Sun, and Wei Liu
Chalcopyrite Cu(In,Ga)Se2 (CIGS) thin films deposited in a low-temperature process (450°C) usually produce fine grains and poor crystallinity. Herein, different Ag treatment processes, which can decrease the melting temperature and enlarge band gap of the CIGS films, were employed to enhance the quality of thin films in a low-temperature deposition process. It is demonstrated that both the Ag precursor and Ag surface treatment process can heighten the crystallinity of CIGS films and the device efficiency. The former is more obvious than the latter. Furthermore, the Urbach energy is also reduced with Ag doping. This work aims to provide a feasible Ag-doping process for the high-quality CIGS films in a low-temperature process. Chalcopyrite Cu(In,Ga)Se2 (CIGS) thin films deposited in a low-temperature process (450°C) usually produce fine grains and poor crystallinity. Herein, different Ag treatment processes, which can decrease the melting temperature and enlarge band gap of the CIGS films, were employed to enhance the quality of thin films in a low-temperature deposition process. It is demonstrated that both the Ag precursor and Ag surface treatment process can heighten the crystallinity of CIGS films and the device efficiency. The former is more obvious than the latter. Furthermore, the Urbach energy is also reduced with Ag doping. This work aims to provide a feasible Ag-doping process for the high-quality CIGS films in a low-temperature process.
Chinese Optics Letters
- Publication Date: Nov. 10, 2021
- Vol. 19, Issue 11, 114001 (2021)
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