Contents
2021
Volume: 51 Issue 3
28 Article(s)

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[in Chinese]
Microelectronics
  • Publication Date: Mar. 11, 2022
  • Vol. 51, Issue 3, 1 (2021)
Design of a High-Performance Residue Amplifier for Pipelined-SAR ADC Based on gm/Id Methodology
RAO Chenguang, XIAO Rui, SANG Qinghua, and DENG Honghui
Microelectronics
  • Publication Date: Mar. 11, 2022
  • Vol. 51, Issue 3, 295 (2021)
A Low Voltage Self-Starting Circuit for Thermoelectric Energy Harvesting
CUI Peng, WEI Baolin, LIANG Zhanrong, XUAN Yan, XU Weilin, WEI Xueming, and DUAN Jihai
Microelectronics
  • Publication Date: Mar. 11, 2022
  • Vol. 51, Issue 3, 308 (2021)
A Reconfigurable Power Divider with Adjustable Phase Difference and Allocation Distribution Ratio
YANG Hong, LEI Peng, PENG Hong, YE Qingsong, and YI Shenghong
Microelectronics
  • Publication Date: Mar. 11, 2022
  • Vol. 51, Issue 3, 341 (2021)
Optimization Design of a LS-Band VCO Based on Response Surface Modeling
DUAN Wenjuan, LIU Bo, ZHANG Jincan, and MENG Qingduan
Microelectronics
  • Publication Date: Mar. 11, 2022
  • Vol. 51, Issue 3, 368 (2021)
TCAD Simulation of Si/Ge Heterojunction Double-Gate Tunneling FET
WANG Hanbin, LIU Mengxin, BI Jinshun, and LI Wei
Microelectronics
  • Publication Date: Mar. 11, 2022
  • Vol. 51, Issue 3, 413 (2021)
A GaN-Based High Voltage Schottky Barrier Diode with Double Heterojunction
HAN Chunlin, SUN Tao, and ZHOU Jianjun
A novel high voltage and low power Schottky barrier diode (SBD) with double-heterojunction was theoretically and experimentally investigated on the GaN/AlGaN/GaN/Si substrate. Owing to the polarization effect, the two-dimensional hole gas (2DHG) and electron gas (2DEG) were formed at the GaN-top/AlGaN and AlGaN/GaN int
Microelectronics
  • Publication Date: Mar. 11, 2022
  • Vol. 51, Issue 3, 439 (2021)
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