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Optoelectronics|103 Article(s)
Heterogeneous forecasting of chaotic dynamics in vertical-cavity surface-emitting lasers with knowledge-based photonic reservoir computing
Liyue Zhang, Chenkun Huang, Songsui Li, Wei Pan, Lianshan Yan, and Xihua Zou
Chaotic dynamics generated by vertical-cavity surface-emitting lasers (VCSELs) has stimulated a variety of applications in secure communication, random key distribution, and chaotic radar for its desirable characteristics. The application of machine learning has made great progress in the prediction of chaotic dynamics. However, the performance is constrained by the training datasets, tedious hyper-parameter optimization, and processing speed. Herein, we propose a heterogeneous forecasting scheme for chaotic dynamics in VCSELs with knowledge-based photonic reservoir computing. An additional imperfect physical model of a VCSEL is introduced into photonic reservoir computing to mitigate the deficiency of the purely data-based approach, which yields improved processing speed, increased accuracy, simplified parameter optimization, and reduced training data size. It is demonstrated that the performance of our proposed scheme is robust to the deficiency of the physical model. Moreover, we elucidate that the performance of knowledge-based photonic reservoir computing will fluctuate with the complexity of chaotic dynamics. Finally, the generality of our results is validated experimentally in parameter spaces of feedback strength and injection strength of reservoir computing. The proposed approach suggests new insights into the prediction of chaotic dynamics of semiconductor lasers. Chaotic dynamics generated by vertical-cavity surface-emitting lasers (VCSELs) has stimulated a variety of applications in secure communication, random key distribution, and chaotic radar for its desirable characteristics. The application of machine learning has made great progress in the prediction of chaotic dynamics. However, the performance is constrained by the training datasets, tedious hyper-parameter optimization, and processing speed. Herein, we propose a heterogeneous forecasting scheme for chaotic dynamics in VCSELs with knowledge-based photonic reservoir computing. An additional imperfect physical model of a VCSEL is introduced into photonic reservoir computing to mitigate the deficiency of the purely data-based approach, which yields improved processing speed, increased accuracy, simplified parameter optimization, and reduced training data size. It is demonstrated that the performance of our proposed scheme is robust to the deficiency of the physical model. Moreover, we elucidate that the performance of knowledge-based photonic reservoir computing will fluctuate with the complexity of chaotic dynamics. Finally, the generality of our results is validated experimentally in parameter spaces of feedback strength and injection strength of reservoir computing. The proposed approach suggests new insights into the prediction of chaotic dynamics of semiconductor lasers.
Photonics Research
- Publication Date: Feb. 28, 2025
- Vol. 13, Issue 3, 728 (2025)
Manipulating exciton confinement for stable and efficient flexible quantum dot light-emitting diodes|Spotlight on Optics
Xiaoyun Hu, Jianfang Yang, Yufei Tu, Zhen Su, Fei Zhu, Qingqing Guan, and Zhiwei Ma
Flexible quantum dot light-emitting diodes (QLEDs) show great promise for the next generation of flexible, wearable, and artificial intelligence display applications. However, the performance of flexible QLEDs still lags behind that of rigid substrate devices, hindering their commercialization for display applications. Here we report the superior performance of flexible QLEDs based on efficient red ZnCdSe/ZnS/ZnSe QDs (A-QDs) with anti-type-I nanostructures. We reveal that using ZnS as an intermediate shell can effectively confine the exciton wavefunction to the inner core, reducing the surface sensitivity of the QDs and maintaining its excellent emission properties. These flexible QLEDs exhibit a peak external quantum efficiency of 23.0% and a long lifetime of 63,050 h, respectively. The anti-type-I nanostructure of A-QDs in the device simultaneously suppresses defect-induced nonradiative recombination and balances carrier injection, achieving the most excellent performance of flexible QLEDs ever reported. This study provides new insights into achieving superior performance in flexible QD-based electroluminescent devices. Flexible quantum dot light-emitting diodes (QLEDs) show great promise for the next generation of flexible, wearable, and artificial intelligence display applications. However, the performance of flexible QLEDs still lags behind that of rigid substrate devices, hindering their commercialization for display applications. Here we report the superior performance of flexible QLEDs based on efficient red ZnCdSe/ZnS/ZnSe QDs (A-QDs) with anti-type-I nanostructures. We reveal that using ZnS as an intermediate shell can effectively confine the exciton wavefunction to the inner core, reducing the surface sensitivity of the QDs and maintaining its excellent emission properties. These flexible QLEDs exhibit a peak external quantum efficiency of 23.0% and a long lifetime of 63,050 h, respectively. The anti-type-I nanostructure of A-QDs in the device simultaneously suppresses defect-induced nonradiative recombination and balances carrier injection, achieving the most excellent performance of flexible QLEDs ever reported. This study provides new insights into achieving superior performance in flexible QD-based electroluminescent devices.
Photonics Research
- Publication Date: Aug. 26, 2024
- Vol. 12, Issue 9, 1927 (2024)
Configuration design of a 2D graphene/3D AlGaN van der Waals junction for high-sensitivity and self-powered ultraviolet detection and imaging|On the Cover
Yuanyuan Yue, Yang Chen, Jianhua Jiang, Lin Yao, Haiyu Wang, Shanli Zhang, Yuping Jia, Ke Jiang, Xiaojuan Sun, and Dabing Li
Two-dimensional (2D) graphene has emerged as an excellent partner for solving the scarcity of ultraviolet photodetectors based on three-dimensional (3D) AlGaN, in which the design of a 2D graphene/3D AlGaN junction becomes crucial. This study investigates the response mechanisms of two distinct graphene/AlGaN (Gr-AlGaN) photodetectors in the lateral and vertical configurations. For the lateral Gr-AlGaN photodetector, photogenerated electrons drifting into p-type graphene channel induce negative photoconductivity and a persistent photoconductive effect, resulting in a high responsivity of 1.27×104 A/W and detectivity of 3.88×1012 Jones. Although the response capability of a vertical Gr-AlGaN device is inferior to the lateral one, it shows significantly reduced dark current and self-powered detection. The photogenerated electron-hole pair can be spontaneously separated by the junction electric field and generate a photocurrent at zero bias. Hence, the vertical Gr-AlGaN photodetector array is satisfied for passive driving imaging like deep space detection. Conversely, the exceptional response of the lateral Gr-AlGaN device emphasizes its prospects for steady object recognition with low-light emission. Moreover, the improved imaging sharpness with light illumination duration makes it suitable for biomimetic visual learning, which follows a recognition to memory process. This study elucidates an efficient approach for diverse photodetection applications through the configuration design of Gr-AlGaN junctions. Two-dimensional (2D) graphene has emerged as an excellent partner for solving the scarcity of ultraviolet photodetectors based on three-dimensional (3D) AlGaN, in which the design of a 2D graphene/3D AlGaN junction becomes crucial. This study investigates the response mechanisms of two distinct graphene/AlGaN (Gr-AlGaN) photodetectors in the lateral and vertical configurations. For the lateral Gr-AlGaN photodetector, photogenerated electrons drifting into p-type graphene channel induce negative photoconductivity and a persistent photoconductive effect, resulting in a high responsivity of 1.27×104 A/W and detectivity of 3.88×1012 Jones. Although the response capability of a vertical Gr-AlGaN device is inferior to the lateral one, it shows significantly reduced dark current and self-powered detection. The photogenerated electron-hole pair can be spontaneously separated by the junction electric field and generate a photocurrent at zero bias. Hence, the vertical Gr-AlGaN photodetector array is satisfied for passive driving imaging like deep space detection. Conversely, the exceptional response of the lateral Gr-AlGaN device emphasizes its prospects for steady object recognition with low-light emission. Moreover, the improved imaging sharpness with light illumination duration makes it suitable for biomimetic visual learning, which follows a recognition to memory process. This study elucidates an efficient approach for diverse photodetection applications through the configuration design of Gr-AlGaN junctions.
Photonics Research
- Publication Date: Aug. 13, 2024
- Vol. 12, Issue 9, 1858 (2024)
Boosting external quantum efficiency of a WSe2 photodetector across visible and NIR spectra through harnessing plasmonic hot electrons
Linlin Shi, Ziyang Zhao, Jinyang Jiao, Ting Ji, Wenyan Wang, Yanxia Cui, and Guohui Li
The layered two-dimensional material tungsten diselenide (WSe2) has triggered tremendous interests in the field of optoelectronic devices due to its exceptional carrier transport property. Nevertheless, the limited absorption of WSe2 in the near infrared (NIR) band poses a challenge for the application of WSe2 photodetectors in night vision, telecommunication, etc. Herein, the enhanced performance of the WSe2 photodetector is demonstrated through the incorporation of titanium nitride nanoparticles (TiN NPs), complemented by an atomically-thick Al2O3 layer that aids in suppressing the dark current. It is demonstrated that TiN NPs can dramatically enhance the absorption of light in the proposed WSe2 photodetector in the NIR regime. This enhancement boosts photocurrent responses through the generation of plasmonic hot electrons, leading to external quantum efficiency (EQE) enhancement factors of 379.66% at 850 nm and 178.47% at 1550 nm. This work presents, for the first time, to our knowledge, that the WSe2 photodetector is capable of detecting broadband light spanning from ultraviolet to the telecommunication range, all achieved without the reliance on additional semiconductor materials. This achievement opens avenues for the advancement of cost-effective NIR photodetectors. The layered two-dimensional material tungsten diselenide (WSe2) has triggered tremendous interests in the field of optoelectronic devices due to its exceptional carrier transport property. Nevertheless, the limited absorption of WSe2 in the near infrared (NIR) band poses a challenge for the application of WSe2 photodetectors in night vision, telecommunication, etc. Herein, the enhanced performance of the WSe2 photodetector is demonstrated through the incorporation of titanium nitride nanoparticles (TiN NPs), complemented by an atomically-thick Al2O3 layer that aids in suppressing the dark current. It is demonstrated that TiN NPs can dramatically enhance the absorption of light in the proposed WSe2 photodetector in the NIR regime. This enhancement boosts photocurrent responses through the generation of plasmonic hot electrons, leading to external quantum efficiency (EQE) enhancement factors of 379.66% at 850 nm and 178.47% at 1550 nm. This work presents, for the first time, to our knowledge, that the WSe2 photodetector is capable of detecting broadband light spanning from ultraviolet to the telecommunication range, all achieved without the reliance on additional semiconductor materials. This achievement opens avenues for the advancement of cost-effective NIR photodetectors.
Photonics Research
- Publication Date: Aug. 13, 2024
- Vol. 12, Issue 9, 1846 (2024)
Tunnel silicon nitride manipulated reconfigurable bi-mode nociceptor analog
Chengdong Yang, Yilong Liu, Linlin Su, Xinwei Li, Lihua Xu, and Qimei Cheng
Neuromorphic applications have shown great promise not only for efficient parallel computing mode to hold certain computational tasks, such as perception and recognition, but also as key biomimetic elements for the intelligent sensory system of next-generation robotics. However, achieving such a biomimetic nociceptor that can adaptively switch operation mode with a stimulation threshold remains a challenge. Through rational design of material properties and device structures, we realized an easily-fabricated, low-energy, and reconfigurable nociceptor. It is capable of threshold-triggered adaptive bi-mode jump that resembles the biological alarm system. With a tunnel silicon nitride (Si3N4) we mimicked the intensity- and rehearsal-triggered jump by means of the tunneling mode transition of Si3N4 dielectric. Under threshold signals the device can also express some common synaptic functions with an extremely low energy density of 33.5 fJ/μm2. In addition, through the modulation of Si3N4 thickness it is relatively easy to fabricate the device with differing pain degree. Our nociceptor analog based on a tunneling layer provides an opportunity for the analog pain alarm system and opens up a new path toward threshold-related novel applications. Neuromorphic applications have shown great promise not only for efficient parallel computing mode to hold certain computational tasks, such as perception and recognition, but also as key biomimetic elements for the intelligent sensory system of next-generation robotics. However, achieving such a biomimetic nociceptor that can adaptively switch operation mode with a stimulation threshold remains a challenge. Through rational design of material properties and device structures, we realized an easily-fabricated, low-energy, and reconfigurable nociceptor. It is capable of threshold-triggered adaptive bi-mode jump that resembles the biological alarm system. With a tunnel silicon nitride (Si3N4) we mimicked the intensity- and rehearsal-triggered jump by means of the tunneling mode transition of Si3N4 dielectric. Under threshold signals the device can also express some common synaptic functions with an extremely low energy density of 33.5 fJ/μm2. In addition, through the modulation of Si3N4 thickness it is relatively easy to fabricate the device with differing pain degree. Our nociceptor analog based on a tunneling layer provides an opportunity for the analog pain alarm system and opens up a new path toward threshold-related novel applications.
Photonics Research
- Publication Date: Aug. 01, 2024
- Vol. 12, Issue 8, 1820 (2024)
Ultralow-phase-noise and broadband frequency-hopping coupled optoelectronic oscillator under quiet point operation
Hui Liu, Mingyang Guo, Tian Zhang, Jian Dai, and Kun Xu
Advancements in microwave photonics have yielded novel approaches for generating high-purity microwave sources. Among these, optoelectronic oscillators (OEOs) and coupled optoelectronic oscillators (COEOs) have demonstrated the capability to generate frequency-independent microwaves with exceptionally low phase noise. Nonetheless, the tunability of the oscillators is rather limited due to the necessity for narrowband electronic bandpass filters, presenting challenges in achieving both wide and rapid tuning capabilities. Here, we present a COEO featuring ultralow phase noise, flexible tuning capability, and high robustness. This is achieved through a quiet point (QP)-operated harmonic mode-locked fiber laser, which effectively mitigates optical amplifier noise and supermode competition, thus significantly diminishing the necessity for ultra-narrow electronic filters. Due to the liberated tuning ability, we present an oscillator that can be tuned from 2 GHz to 18 GHz, with phase noise as low as -140 dBc/Hz at 10 kHz under the QP operation. We then illustrate the practical application of the proposed oscillator in generating frequency-hopping signals with consistent spurious modes less than -85 dBc, absolute phase noise below -135 dBc/Hz at 10 kHz, hopping resolution of 1.25 MHz, and fractional frequency stability below 6.1×10-12 at 1 s averaging time when locked to a reference. The presented COEO structure emerges as a compelling solution for agile and low-noise microwave sources in advanced wireless communication and radar systems. Advancements in microwave photonics have yielded novel approaches for generating high-purity microwave sources. Among these, optoelectronic oscillators (OEOs) and coupled optoelectronic oscillators (COEOs) have demonstrated the capability to generate frequency-independent microwaves with exceptionally low phase noise. Nonetheless, the tunability of the oscillators is rather limited due to the necessity for narrowband electronic bandpass filters, presenting challenges in achieving both wide and rapid tuning capabilities. Here, we present a COEO featuring ultralow phase noise, flexible tuning capability, and high robustness. This is achieved through a quiet point (QP)-operated harmonic mode-locked fiber laser, which effectively mitigates optical amplifier noise and supermode competition, thus significantly diminishing the necessity for ultra-narrow electronic filters. Due to the liberated tuning ability, we present an oscillator that can be tuned from 2 GHz to 18 GHz, with phase noise as low as -140 dBc/Hz at 10 kHz under the QP operation. We then illustrate the practical application of the proposed oscillator in generating frequency-hopping signals with consistent spurious modes less than -85 dBc, absolute phase noise below -135 dBc/Hz at 10 kHz, hopping resolution of 1.25 MHz, and fractional frequency stability below 6.1×10-12 at 1 s averaging time when locked to a reference. The presented COEO structure emerges as a compelling solution for agile and low-noise microwave sources in advanced wireless communication and radar systems.
Photonics Research
- Publication Date: Aug. 01, 2024
- Vol. 12, Issue 8, 1785 (2024)
Ka-band thin film lithium niobate photonic integrated optoelectronic oscillator|Editors' Pick
Rui Ma, Zijun Huang, Shengqian Gao, Jingyi Wang, Xichen Wang, Xian Zhang, Peng Hao, X. Steve Yao, and Xinlun Cai
Photonics integration of an optoelectronic oscillator (OEO) on a chip is attractive for fabricating low cost, compact, low power consumption, and highly reliable microwave sources, which has been demonstrated recently in silicon on insulator (SOI) and indium phosphide (InP) platforms at X-band around 8 GHz. Here we demonstrate the first integration of OEOs on the thin film lithium niobate (TFLN) platform, which has the advantages of lower Vπ, no chirp, wider frequency range, and less sensitivity to temperature. We have successfully realized two different OEOs operating at Ka-band, with phase noises even lower than those of the X-band OEOs on SOI and InP platforms. One is a fixed frequency OEO at 30 GHz realized by integrating a Mach–Zehnder modulator (MZM) with an add-drop microring resonator (MRR), and the other is a tunable frequency OEO at 20–35 GHz realized by integrating a phase modulator (PM) with a notch MRR. Our work marks the first step of using TFLN to fabricate integrated OEOs with high frequency, small size, low cost, wide range tunability, and potentially low phase noise. Photonics integration of an optoelectronic oscillator (OEO) on a chip is attractive for fabricating low cost, compact, low power consumption, and highly reliable microwave sources, which has been demonstrated recently in silicon on insulator (SOI) and indium phosphide (InP) platforms at X-band around 8 GHz. Here we demonstrate the first integration of OEOs on the thin film lithium niobate (TFLN) platform, which has the advantages of lower Vπ, no chirp, wider frequency range, and less sensitivity to temperature. We have successfully realized two different OEOs operating at Ka-band, with phase noises even lower than those of the X-band OEOs on SOI and InP platforms. One is a fixed frequency OEO at 30 GHz realized by integrating a Mach–Zehnder modulator (MZM) with an add-drop microring resonator (MRR), and the other is a tunable frequency OEO at 20–35 GHz realized by integrating a phase modulator (PM) with a notch MRR. Our work marks the first step of using TFLN to fabricate integrated OEOs with high frequency, small size, low cost, wide range tunability, and potentially low phase noise.
Photonics Research
- Publication Date: May. 31, 2024
- Vol. 12, Issue 6, 1283 (2024)
High-speed GaN-based laser diode with modulation bandwidth exceeding 5 GHz for 20 Gbps visible light communication
Junfei Wang, Junhui Hu, Chaowen Guan, Yuqi Hou, Zengyi Xu, Leihao Sun, Yue Wang, Yuning Zhou, Boon S. Ooi, Jianyang Shi, Ziwei Li, Junwen Zhang, Nan Chi, Shaohua Yu, and Chao Shen
Visible light communication (VLC) based on laser diodes demonstrates great potential for high data rate maritime, terrestrial, and aerial wireless data links. Here, we design and fabricate high-speed blue laser diodes (LDs) grown on c-plane gallium nitride (GaN) substrate. This was achieved through active region design and miniaturization toward a narrow ridge waveguide, short cavity length, and single longitudinal mode Fabry–Perot laser diode. The fabricated mini-LD has a low threshold current of 31 mA and slope efficiency of 1.02 W/A. A record modulation bandwidth of 5.9 GHz (-3 dB) was measured from the mini-LD. Using the developed mini-LD as a transmitter, the VLC link exhibits a high data transmission rate of 20.06 Gbps adopting the bit and power loading discrete multitone (DMT) modulation technique. The corresponding bit error rate is 0.003, satisfying the forward error correction standard. The demonstrated GaN-based mini-LD has significantly enhanced data transmission rates, paving the path for energy-efficient VLC systems and integrated photonics in the visible regime. Visible light communication (VLC) based on laser diodes demonstrates great potential for high data rate maritime, terrestrial, and aerial wireless data links. Here, we design and fabricate high-speed blue laser diodes (LDs) grown on c-plane gallium nitride (GaN) substrate. This was achieved through active region design and miniaturization toward a narrow ridge waveguide, short cavity length, and single longitudinal mode Fabry–Perot laser diode. The fabricated mini-LD has a low threshold current of 31 mA and slope efficiency of 1.02 W/A. A record modulation bandwidth of 5.9 GHz (-3 dB) was measured from the mini-LD. Using the developed mini-LD as a transmitter, the VLC link exhibits a high data transmission rate of 20.06 Gbps adopting the bit and power loading discrete multitone (DMT) modulation technique. The corresponding bit error rate is 0.003, satisfying the forward error correction standard. The demonstrated GaN-based mini-LD has significantly enhanced data transmission rates, paving the path for energy-efficient VLC systems and integrated photonics in the visible regime.
Photonics Research
- Publication Date: May. 27, 2024
- Vol. 12, Issue 6, 1186 (2024)
Addressable structured light system using metasurface optics and an individually addressable VCSEL array|Spotlight on Optics
Chenyang Wu, Xuanlun Huang, Yipeng Ji, Tingyu Cheng, Jiaxing Wang, Nan Chi, Shaohua Yu, and Connie J. Chang-Hasnain
Structured-light (SL) based 3D sensors have been widely used in many fields. Speckle SL is the most widely deployed among all SL sensors due to its light weight, compact size, fast video rate, and low cost. The transmitter (known as the dot projector) consists of a randomly patterned vertical-cavity surface-emitting laser (VCSEL) array multiplicated by a diffractive optical element (DOE) with a fixed repeated pattern. Given that the separation of any two speckles is only one known and fixed number (albeit random), there are no other known scales to calibrate or average. Hence, typical SL sensors require extensive in-factory calibrations, and the depth resolution is limited to 1 mm at ∼60 cm distance. In this paper, to the best of our knowledge, we propose a novel dot projector and a new addressable SL (ASL) 3D sensor by using a regularly spaced, individually addressable VCSEL array, multiplicated by a metasurface-DOE (MDOE) into a random pattern of the array. Dynamically turning on or off the VCSELs in the array provides multiple known distances between neighboring speckles, which is used as a “built-in caliper” to achieve higher accuracy of depth. Serving as a precise “vernier caliper,” the addressable VCSEL array enables fine control over speckle positions and high detection precision. We experimentally demonstrated that the proposed method can result in sub-hundred-micron level precision. This new concept opens new possibilities for applications such as 3D computation, facial recognition, and wearable devices. Structured-light (SL) based 3D sensors have been widely used in many fields. Speckle SL is the most widely deployed among all SL sensors due to its light weight, compact size, fast video rate, and low cost. The transmitter (known as the dot projector) consists of a randomly patterned vertical-cavity surface-emitting laser (VCSEL) array multiplicated by a diffractive optical element (DOE) with a fixed repeated pattern. Given that the separation of any two speckles is only one known and fixed number (albeit random), there are no other known scales to calibrate or average. Hence, typical SL sensors require extensive in-factory calibrations, and the depth resolution is limited to 1 mm at ∼60 cm distance. In this paper, to the best of our knowledge, we propose a novel dot projector and a new addressable SL (ASL) 3D sensor by using a regularly spaced, individually addressable VCSEL array, multiplicated by a metasurface-DOE (MDOE) into a random pattern of the array. Dynamically turning on or off the VCSELs in the array provides multiple known distances between neighboring speckles, which is used as a “built-in caliper” to achieve higher accuracy of depth. Serving as a precise “vernier caliper,” the addressable VCSEL array enables fine control over speckle positions and high detection precision. We experimentally demonstrated that the proposed method can result in sub-hundred-micron level precision. This new concept opens new possibilities for applications such as 3D computation, facial recognition, and wearable devices.
Photonics Research
- Publication Date: May. 17, 2024
- Vol. 12, Issue 6, 1129 (2024)
Target-adaptive optical phased array lidar
Yunhao Fu, Baisong Chen, Wenqiang Yue, Min Tao, Haoyang Zhao, Yingzhi Li, Xuetong Li, Huan Qu, Xueyan Li, Xiaolong Hu, and Junfeng Song
Lidar based on the optical phased array (OPA) and frequency-modulated continuous wave (FMCW) technology stands out in automotive applications due to its all-solid-state design, high reliability, and remarkable resistance to interference. However, while FMCW coherent detection enhances the interference resistance capabilities, it concurrently results in a significant increase in depth computation, becoming a primary constraint for improving point cloud density in such perception systems. To address this challenge, this study introduces a lidar solution leveraging the flexible scanning characteristics of OPA. The proposed system categorizes target types within the scene based on RGB images. Subsequently, it performs scans with varying angular resolutions depending on the importance of the targets. Experimental results demonstrate that, compared to traditional scanning methods, the target-adaptive method based on semantic segmentation reduces the number of points to about one-quarter while maintaining the resolution of the primary target area. Conversely, with a similar number of points, the proposed approach increases the point cloud density of the primary target area by about four times. Lidar based on the optical phased array (OPA) and frequency-modulated continuous wave (FMCW) technology stands out in automotive applications due to its all-solid-state design, high reliability, and remarkable resistance to interference. However, while FMCW coherent detection enhances the interference resistance capabilities, it concurrently results in a significant increase in depth computation, becoming a primary constraint for improving point cloud density in such perception systems. To address this challenge, this study introduces a lidar solution leveraging the flexible scanning characteristics of OPA. The proposed system categorizes target types within the scene based on RGB images. Subsequently, it performs scans with varying angular resolutions depending on the importance of the targets. Experimental results demonstrate that, compared to traditional scanning methods, the target-adaptive method based on semantic segmentation reduces the number of points to about one-quarter while maintaining the resolution of the primary target area. Conversely, with a similar number of points, the proposed approach increases the point cloud density of the primary target area by about four times.
Photonics Research
- Publication Date: Apr. 12, 2024
- Vol. 12, Issue 5, 904 (2024)
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