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Optoelectronics|108 Article(s)
Electron–phonon coupling enhanced by graphene/PZT heterostructure for infrared emission and optical information transmission
Kaixi Bi, Linyu Mei, Shuqi Han, Jialiang Chen, Yan Zhuang, Exian Liu, Wenhui Wang, and Xiujian Chou
High-performance infrared emitters hold substantial importance in modern engineering and physics. Here, we introduce graphene/PZT (lead zirconate titanate) heterostructure as a new platform for the development of infrared source structure based on an electron–phonon coupling and emitting mechanism. A series of electrical characterizations including carrier mobility [11,361.55 cm2/(V·s)], pulse current (30 ms response time), and cycling stability (2000 cycles) modulated by polarized film was provided. Its maximum working temperature reaches ∼1041 K (∼768°C), and it was broken at 1173 K (∼900°C) within ∼1.2 s rise time and fall time. Based on Wien’s displacement law, the high temperature will lead to near–mid–far thermal infrared when the heterostructure is applied to external voltages, and obvious bright white light could be observed by the naked eye. The changing process has also been recorded by mobile phone. In subsequent infrared emitting applications, 11 V bias voltage was applied on the PZT/graphene structure to produce the temperature change of ∼299 to 445 K within ∼0.96 s rise time and ∼0.98 s fall time. To demonstrate its optical information transmission ability, we exhibited “N, U, C” letters by the time-frequency method at 3 mm×3 mm@20 m condition. Combining with spatial Morse code infrared units, alphabetic information could also be transmitted by infrared array images. Compared with the traditional infrared emitter, the electron–phonon enhancing mechanism and high-performance emission properties of the heterostructure demonstrated a novel and reliable platform for further infrared optical applications. High-performance infrared emitters hold substantial importance in modern engineering and physics. Here, we introduce graphene/PZT (lead zirconate titanate) heterostructure as a new platform for the development of infrared source structure based on an electron–phonon coupling and emitting mechanism. A series of electrical characterizations including carrier mobility [11,361.55 cm2/(V·s)], pulse current (30 ms response time), and cycling stability (2000 cycles) modulated by polarized film was provided. Its maximum working temperature reaches ∼1041 K (∼768°C), and it was broken at 1173 K (∼900°C) within ∼1.2 s rise time and fall time. Based on Wien’s displacement law, the high temperature will lead to near–mid–far thermal infrared when the heterostructure is applied to external voltages, and obvious bright white light could be observed by the naked eye. The changing process has also been recorded by mobile phone. In subsequent infrared emitting applications, 11 V bias voltage was applied on the PZT/graphene structure to produce the temperature change of ∼299 to 445 K within ∼0.96 s rise time and ∼0.98 s fall time. To demonstrate its optical information transmission ability, we exhibited “N, U, C” letters by the time-frequency method at 3 mm×3 mm@20 m condition. Combining with spatial Morse code infrared units, alphabetic information could also be transmitted by infrared array images. Compared with the traditional infrared emitter, the electron–phonon enhancing mechanism and high-performance emission properties of the heterostructure demonstrated a novel and reliable platform for further infrared optical applications.
Photonics Research
- Publication Date: May. 16, 2025
- Vol. 13, Issue 6, 1459 (2025)
High-speed avalanche photodiodes for optical communication
Tianhong Liu, Guohao Yang, Jinping Li, and Cunzhu Tong
Advanced technologies such as autonomous driving, cloud computing, Internet of Things, and artificial intelligence have considerably increased data demand. Real-time interactions further drive the development of high-speed, high-capacity networks. Advancements in communication systems depend on developing high-speed optoelectronic devices. Optical communication systems are rapidly evolving, with data rates advancing from 800 Gbps to 1.6 Tbps and beyond, driven by the development of high-performance photodetectors, high-speed modulators, and advanced RF devices. Avalanche photodetectors (APDs) are used in long-distance applications owing to their high internal gain and responsivity. This paper reviews the structural designs of APDs based on various materials for high-speed communication and provides an outlook on developing APDs based on advanced materials. Advanced technologies such as autonomous driving, cloud computing, Internet of Things, and artificial intelligence have considerably increased data demand. Real-time interactions further drive the development of high-speed, high-capacity networks. Advancements in communication systems depend on developing high-speed optoelectronic devices. Optical communication systems are rapidly evolving, with data rates advancing from 800 Gbps to 1.6 Tbps and beyond, driven by the development of high-performance photodetectors, high-speed modulators, and advanced RF devices. Avalanche photodetectors (APDs) are used in long-distance applications owing to their high internal gain and responsivity. This paper reviews the structural designs of APDs based on various materials for high-speed communication and provides an outlook on developing APDs based on advanced materials.
Photonics Research
- Publication Date: May. 07, 2025
- Vol. 13, Issue 6, 1438 (2025)
High-precision quasi-static sensing method based on WGM resonator self-modulation
Tao Jia, Enbo Xing, Jianglong Li, Jiamin Rong, Hongbo Yue, Yujie Zhang, Guohui Xing, Yanru Zhou, Wenyao Liu, Jun Tang, and Jun Liu
Whispering gallery mode (WGM) resonators have been widely researched for their high-sensitivity sensing capability, but there is currently a lack of high-sensitivity real-time sensing methods for quasi-static measurement. In this paper, within the framework of dissipative coupling sensing, a new method for quasi-static sensing based on the self-modulation of lithium niobate (LiNbO3) resonators is proposed. The LiNbO3 resonator actively modulates the signal to be measured, solving the challenge of real-time demodulation of quasi-static signals. The noise background is upconverted to a high frequency region with lower noise, further enhancing the detection limit. In the demonstration of quasi-static displacement sensing, a customized LiNbO3 resonator with a Q-factor of 2.09×107 serves as the high frequency modulation and sensing element, while the movable resonator acts as the displacement loading unit. Experimental and theoretical results show that the sensing response can be improved to 0.0416 V/nm by dissipation engineering to enhance the resonator evanescent field decay rate and orthogonal polarization optimization. The Allan deviation σ demonstrates a bias instability of 0.205 nm, which represents the best result known to date for microresonator displacement sensing in the quasi-static range. Our proposed scheme demonstrates competitiveness in high-precision quasi-static sensing and provides solutions for the high-precision real-time detection of low frequency or very low frequency acceleration, pressure, nanoparticles, or viruses. Whispering gallery mode (WGM) resonators have been widely researched for their high-sensitivity sensing capability, but there is currently a lack of high-sensitivity real-time sensing methods for quasi-static measurement. In this paper, within the framework of dissipative coupling sensing, a new method for quasi-static sensing based on the self-modulation of lithium niobate (LiNbO3) resonators is proposed. The LiNbO3 resonator actively modulates the signal to be measured, solving the challenge of real-time demodulation of quasi-static signals. The noise background is upconverted to a high frequency region with lower noise, further enhancing the detection limit. In the demonstration of quasi-static displacement sensing, a customized LiNbO3 resonator with a Q-factor of 2.09×107 serves as the high frequency modulation and sensing element, while the movable resonator acts as the displacement loading unit. Experimental and theoretical results show that the sensing response can be improved to 0.0416 V/nm by dissipation engineering to enhance the resonator evanescent field decay rate and orthogonal polarization optimization. The Allan deviation σ demonstrates a bias instability of 0.205 nm, which represents the best result known to date for microresonator displacement sensing in the quasi-static range. Our proposed scheme demonstrates competitiveness in high-precision quasi-static sensing and provides solutions for the high-precision real-time detection of low frequency or very low frequency acceleration, pressure, nanoparticles, or viruses.
Photonics Research
- Publication Date: May. 01, 2025
- Vol. 13, Issue 5, 1375 (2025)
Plasmonic omni-directional reflective pads for enhanced light extraction in sub-250 nm deep-ultraviolet light-emitting diodes
Wenyu Kang, Shilin Liu, Xiaofang Ye, Yang Chen, Wei Jiang, Jinchai Li, Kai Huang, Jun Yin, and Junyong Kang
AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) still face challenges in achieving high-quality AlGaN material and extracting the strong transverse magnetic (TM) mode emission (which is influenced by valence band splitting inversion). Particularly, these challenges impact devices with wavelengths shorter than 250 nm on their optical power and wall-plug efficiency (WPE) due to an increased proportion of TM mode. Here, the plasmonic omni-directional reflective pad arrays were designed and introduced into the p-contact layer to enhance the light extraction for sub-250 nm DUV LEDs. Meanwhile, a novel device structure, to our knowledge, was put forward, integrating uniformly distributed n-type contact rods as an efficient light guide channel. The theoretical simulation demonstrated a light extraction improvement since these embedded plasmonic reflective pad arrays effectively altered the wavevector of transverse electric (TE) and TM mode photons from the quantum wells. An average enhancement of 12.5% in optical output power was attained in 249.5 nm DUV LEDs through the usage of the optimized diameter of the plasmonic pads. Furthermore, a quartz lens bonded with fluorine resin was introduced to improve refractive index matching at the light output interface, and a high optical power of 3.45 mW was achieved from the original 2.55 mW at a driven current of 100 mA. AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) still face challenges in achieving high-quality AlGaN material and extracting the strong transverse magnetic (TM) mode emission (which is influenced by valence band splitting inversion). Particularly, these challenges impact devices with wavelengths shorter than 250 nm on their optical power and wall-plug efficiency (WPE) due to an increased proportion of TM mode. Here, the plasmonic omni-directional reflective pad arrays were designed and introduced into the p-contact layer to enhance the light extraction for sub-250 nm DUV LEDs. Meanwhile, a novel device structure, to our knowledge, was put forward, integrating uniformly distributed n-type contact rods as an efficient light guide channel. The theoretical simulation demonstrated a light extraction improvement since these embedded plasmonic reflective pad arrays effectively altered the wavevector of transverse electric (TE) and TM mode photons from the quantum wells. An average enhancement of 12.5% in optical output power was attained in 249.5 nm DUV LEDs through the usage of the optimized diameter of the plasmonic pads. Furthermore, a quartz lens bonded with fluorine resin was introduced to improve refractive index matching at the light output interface, and a high optical power of 3.45 mW was achieved from the original 2.55 mW at a driven current of 100 mA.
Photonics Research
- Publication Date: Apr. 01, 2025
- Vol. 13, Issue 4, 1094 (2025)
Reverse Smith-Purcell radiation in photonic crystals
Xiaoqiuyan Zhang, Sunchao Huang, Tianyu Zhang, Yuxuan Zhuang, Xingxing Xu, Fu Tang, Zhaoyun Duan, Yanyu Wei, Yubin Gong, and Min Hu
Free electron radiation, particularly Smith-Purcell radiation, provides a versatile platform for exploring light-matter interactions and generating light sources. A fundamental characteristic of Smith-Purcell radiation is the monotonic decrease in radiation frequency as the observation angle increases relative to the direction of the free electrons’ motion, akin to the Doppler effect. Here, we demonstrate that this fundamental characteristic can be altered in Smith-Purcell radiation generated by photonic crystals with left-handed properties. Specifically, we have achieved, to our knowledge, a novel phenomenon that the lower-frequency components propagate forward, while the higher-frequency components propagate backward, which we define as reverse Smith-Purcell radiation. Additionally, this reverse Smith-Purcell radiation can confine the radiation to a narrow angular range, which provides a way to obtain broadband light sources in a specific observation angle. Furthermore, by precisely adjusting the grating geometry and the kinetic energy of the free electrons, we can control both the radiation direction and the output frequencies. Our results provide a promising platform to study unexplored light-matter interactions and open avenues to obtain tunable, broadband light sources. Free electron radiation, particularly Smith-Purcell radiation, provides a versatile platform for exploring light-matter interactions and generating light sources. A fundamental characteristic of Smith-Purcell radiation is the monotonic decrease in radiation frequency as the observation angle increases relative to the direction of the free electrons’ motion, akin to the Doppler effect. Here, we demonstrate that this fundamental characteristic can be altered in Smith-Purcell radiation generated by photonic crystals with left-handed properties. Specifically, we have achieved, to our knowledge, a novel phenomenon that the lower-frequency components propagate forward, while the higher-frequency components propagate backward, which we define as reverse Smith-Purcell radiation. Additionally, this reverse Smith-Purcell radiation can confine the radiation to a narrow angular range, which provides a way to obtain broadband light sources in a specific observation angle. Furthermore, by precisely adjusting the grating geometry and the kinetic energy of the free electrons, we can control both the radiation direction and the output frequencies. Our results provide a promising platform to study unexplored light-matter interactions and open avenues to obtain tunable, broadband light sources.
Photonics Research
- Publication Date: Mar. 31, 2025
- Vol. 13, Issue 4, 1060 (2025)
Heterogeneous forecasting of chaotic dynamics in vertical-cavity surface-emitting lasers with knowledge-based photonic reservoir computing
Liyue Zhang, Chenkun Huang, Songsui Li, Wei Pan, Lianshan Yan, and Xihua Zou
Chaotic dynamics generated by vertical-cavity surface-emitting lasers (VCSELs) has stimulated a variety of applications in secure communication, random key distribution, and chaotic radar for its desirable characteristics. The application of machine learning has made great progress in the prediction of chaotic dynamics. However, the performance is constrained by the training datasets, tedious hyper-parameter optimization, and processing speed. Herein, we propose a heterogeneous forecasting scheme for chaotic dynamics in VCSELs with knowledge-based photonic reservoir computing. An additional imperfect physical model of a VCSEL is introduced into photonic reservoir computing to mitigate the deficiency of the purely data-based approach, which yields improved processing speed, increased accuracy, simplified parameter optimization, and reduced training data size. It is demonstrated that the performance of our proposed scheme is robust to the deficiency of the physical model. Moreover, we elucidate that the performance of knowledge-based photonic reservoir computing will fluctuate with the complexity of chaotic dynamics. Finally, the generality of our results is validated experimentally in parameter spaces of feedback strength and injection strength of reservoir computing. The proposed approach suggests new insights into the prediction of chaotic dynamics of semiconductor lasers. Chaotic dynamics generated by vertical-cavity surface-emitting lasers (VCSELs) has stimulated a variety of applications in secure communication, random key distribution, and chaotic radar for its desirable characteristics. The application of machine learning has made great progress in the prediction of chaotic dynamics. However, the performance is constrained by the training datasets, tedious hyper-parameter optimization, and processing speed. Herein, we propose a heterogeneous forecasting scheme for chaotic dynamics in VCSELs with knowledge-based photonic reservoir computing. An additional imperfect physical model of a VCSEL is introduced into photonic reservoir computing to mitigate the deficiency of the purely data-based approach, which yields improved processing speed, increased accuracy, simplified parameter optimization, and reduced training data size. It is demonstrated that the performance of our proposed scheme is robust to the deficiency of the physical model. Moreover, we elucidate that the performance of knowledge-based photonic reservoir computing will fluctuate with the complexity of chaotic dynamics. Finally, the generality of our results is validated experimentally in parameter spaces of feedback strength and injection strength of reservoir computing. The proposed approach suggests new insights into the prediction of chaotic dynamics of semiconductor lasers.
Photonics Research
- Publication Date: Feb. 28, 2025
- Vol. 13, Issue 3, 728 (2025)
Manipulating exciton confinement for stable and efficient flexible quantum dot light-emitting diodes|Spotlight on Optics
Xiaoyun Hu, Jianfang Yang, Yufei Tu, Zhen Su, Fei Zhu, Qingqing Guan, and Zhiwei Ma
Flexible quantum dot light-emitting diodes (QLEDs) show great promise for the next generation of flexible, wearable, and artificial intelligence display applications. However, the performance of flexible QLEDs still lags behind that of rigid substrate devices, hindering their commercialization for display applications. Here we report the superior performance of flexible QLEDs based on efficient red ZnCdSe/ZnS/ZnSe QDs (A-QDs) with anti-type-I nanostructures. We reveal that using ZnS as an intermediate shell can effectively confine the exciton wavefunction to the inner core, reducing the surface sensitivity of the QDs and maintaining its excellent emission properties. These flexible QLEDs exhibit a peak external quantum efficiency of 23.0% and a long lifetime of 63,050 h, respectively. The anti-type-I nanostructure of A-QDs in the device simultaneously suppresses defect-induced nonradiative recombination and balances carrier injection, achieving the most excellent performance of flexible QLEDs ever reported. This study provides new insights into achieving superior performance in flexible QD-based electroluminescent devices. Flexible quantum dot light-emitting diodes (QLEDs) show great promise for the next generation of flexible, wearable, and artificial intelligence display applications. However, the performance of flexible QLEDs still lags behind that of rigid substrate devices, hindering their commercialization for display applications. Here we report the superior performance of flexible QLEDs based on efficient red ZnCdSe/ZnS/ZnSe QDs (A-QDs) with anti-type-I nanostructures. We reveal that using ZnS as an intermediate shell can effectively confine the exciton wavefunction to the inner core, reducing the surface sensitivity of the QDs and maintaining its excellent emission properties. These flexible QLEDs exhibit a peak external quantum efficiency of 23.0% and a long lifetime of 63,050 h, respectively. The anti-type-I nanostructure of A-QDs in the device simultaneously suppresses defect-induced nonradiative recombination and balances carrier injection, achieving the most excellent performance of flexible QLEDs ever reported. This study provides new insights into achieving superior performance in flexible QD-based electroluminescent devices.
Photonics Research
- Publication Date: Aug. 26, 2024
- Vol. 12, Issue 9, 1927 (2024)
Configuration design of a 2D graphene/3D AlGaN van der Waals junction for high-sensitivity and self-powered ultraviolet detection and imaging|On the Cover
Yuanyuan Yue, Yang Chen, Jianhua Jiang, Lin Yao, Haiyu Wang, Shanli Zhang, Yuping Jia, Ke Jiang, Xiaojuan Sun, and Dabing Li
Two-dimensional (2D) graphene has emerged as an excellent partner for solving the scarcity of ultraviolet photodetectors based on three-dimensional (3D) AlGaN, in which the design of a 2D graphene/3D AlGaN junction becomes crucial. This study investigates the response mechanisms of two distinct graphene/AlGaN (Gr-AlGaN) photodetectors in the lateral and vertical configurations. For the lateral Gr-AlGaN photodetector, photogenerated electrons drifting into p-type graphene channel induce negative photoconductivity and a persistent photoconductive effect, resulting in a high responsivity of 1.27×104 A/W and detectivity of 3.88×1012 Jones. Although the response capability of a vertical Gr-AlGaN device is inferior to the lateral one, it shows significantly reduced dark current and self-powered detection. The photogenerated electron-hole pair can be spontaneously separated by the junction electric field and generate a photocurrent at zero bias. Hence, the vertical Gr-AlGaN photodetector array is satisfied for passive driving imaging like deep space detection. Conversely, the exceptional response of the lateral Gr-AlGaN device emphasizes its prospects for steady object recognition with low-light emission. Moreover, the improved imaging sharpness with light illumination duration makes it suitable for biomimetic visual learning, which follows a recognition to memory process. This study elucidates an efficient approach for diverse photodetection applications through the configuration design of Gr-AlGaN junctions. Two-dimensional (2D) graphene has emerged as an excellent partner for solving the scarcity of ultraviolet photodetectors based on three-dimensional (3D) AlGaN, in which the design of a 2D graphene/3D AlGaN junction becomes crucial. This study investigates the response mechanisms of two distinct graphene/AlGaN (Gr-AlGaN) photodetectors in the lateral and vertical configurations. For the lateral Gr-AlGaN photodetector, photogenerated electrons drifting into p-type graphene channel induce negative photoconductivity and a persistent photoconductive effect, resulting in a high responsivity of 1.27×104 A/W and detectivity of 3.88×1012 Jones. Although the response capability of a vertical Gr-AlGaN device is inferior to the lateral one, it shows significantly reduced dark current and self-powered detection. The photogenerated electron-hole pair can be spontaneously separated by the junction electric field and generate a photocurrent at zero bias. Hence, the vertical Gr-AlGaN photodetector array is satisfied for passive driving imaging like deep space detection. Conversely, the exceptional response of the lateral Gr-AlGaN device emphasizes its prospects for steady object recognition with low-light emission. Moreover, the improved imaging sharpness with light illumination duration makes it suitable for biomimetic visual learning, which follows a recognition to memory process. This study elucidates an efficient approach for diverse photodetection applications through the configuration design of Gr-AlGaN junctions.
Photonics Research
- Publication Date: Aug. 13, 2024
- Vol. 12, Issue 9, 1858 (2024)
Boosting external quantum efficiency of a WSe2 photodetector across visible and NIR spectra through harnessing plasmonic hot electrons
Linlin Shi, Ziyang Zhao, Jinyang Jiao, Ting Ji, Wenyan Wang, Yanxia Cui, and Guohui Li
The layered two-dimensional material tungsten diselenide (WSe2) has triggered tremendous interests in the field of optoelectronic devices due to its exceptional carrier transport property. Nevertheless, the limited absorption of WSe2 in the near infrared (NIR) band poses a challenge for the application of WSe2 photodetectors in night vision, telecommunication, etc. Herein, the enhanced performance of the WSe2 photodetector is demonstrated through the incorporation of titanium nitride nanoparticles (TiN NPs), complemented by an atomically-thick Al2O3 layer that aids in suppressing the dark current. It is demonstrated that TiN NPs can dramatically enhance the absorption of light in the proposed WSe2 photodetector in the NIR regime. This enhancement boosts photocurrent responses through the generation of plasmonic hot electrons, leading to external quantum efficiency (EQE) enhancement factors of 379.66% at 850 nm and 178.47% at 1550 nm. This work presents, for the first time, to our knowledge, that the WSe2 photodetector is capable of detecting broadband light spanning from ultraviolet to the telecommunication range, all achieved without the reliance on additional semiconductor materials. This achievement opens avenues for the advancement of cost-effective NIR photodetectors. The layered two-dimensional material tungsten diselenide (WSe2) has triggered tremendous interests in the field of optoelectronic devices due to its exceptional carrier transport property. Nevertheless, the limited absorption of WSe2 in the near infrared (NIR) band poses a challenge for the application of WSe2 photodetectors in night vision, telecommunication, etc. Herein, the enhanced performance of the WSe2 photodetector is demonstrated through the incorporation of titanium nitride nanoparticles (TiN NPs), complemented by an atomically-thick Al2O3 layer that aids in suppressing the dark current. It is demonstrated that TiN NPs can dramatically enhance the absorption of light in the proposed WSe2 photodetector in the NIR regime. This enhancement boosts photocurrent responses through the generation of plasmonic hot electrons, leading to external quantum efficiency (EQE) enhancement factors of 379.66% at 850 nm and 178.47% at 1550 nm. This work presents, for the first time, to our knowledge, that the WSe2 photodetector is capable of detecting broadband light spanning from ultraviolet to the telecommunication range, all achieved without the reliance on additional semiconductor materials. This achievement opens avenues for the advancement of cost-effective NIR photodetectors.
Photonics Research
- Publication Date: Aug. 13, 2024
- Vol. 12, Issue 9, 1846 (2024)
Tunnel silicon nitride manipulated reconfigurable bi-mode nociceptor analog
Chengdong Yang, Yilong Liu, Linlin Su, Xinwei Li, Lihua Xu, and Qimei Cheng
Neuromorphic applications have shown great promise not only for efficient parallel computing mode to hold certain computational tasks, such as perception and recognition, but also as key biomimetic elements for the intelligent sensory system of next-generation robotics. However, achieving such a biomimetic nociceptor that can adaptively switch operation mode with a stimulation threshold remains a challenge. Through rational design of material properties and device structures, we realized an easily-fabricated, low-energy, and reconfigurable nociceptor. It is capable of threshold-triggered adaptive bi-mode jump that resembles the biological alarm system. With a tunnel silicon nitride (Si3N4) we mimicked the intensity- and rehearsal-triggered jump by means of the tunneling mode transition of Si3N4 dielectric. Under threshold signals the device can also express some common synaptic functions with an extremely low energy density of 33.5 fJ/μm2. In addition, through the modulation of Si3N4 thickness it is relatively easy to fabricate the device with differing pain degree. Our nociceptor analog based on a tunneling layer provides an opportunity for the analog pain alarm system and opens up a new path toward threshold-related novel applications. Neuromorphic applications have shown great promise not only for efficient parallel computing mode to hold certain computational tasks, such as perception and recognition, but also as key biomimetic elements for the intelligent sensory system of next-generation robotics. However, achieving such a biomimetic nociceptor that can adaptively switch operation mode with a stimulation threshold remains a challenge. Through rational design of material properties and device structures, we realized an easily-fabricated, low-energy, and reconfigurable nociceptor. It is capable of threshold-triggered adaptive bi-mode jump that resembles the biological alarm system. With a tunnel silicon nitride (Si3N4) we mimicked the intensity- and rehearsal-triggered jump by means of the tunneling mode transition of Si3N4 dielectric. Under threshold signals the device can also express some common synaptic functions with an extremely low energy density of 33.5 fJ/μm2. In addition, through the modulation of Si3N4 thickness it is relatively easy to fabricate the device with differing pain degree. Our nociceptor analog based on a tunneling layer provides an opportunity for the analog pain alarm system and opens up a new path toward threshold-related novel applications.
Photonics Research
- Publication Date: Aug. 01, 2024
- Vol. 12, Issue 8, 1820 (2024)
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