Journals >Optoelectronics Letters
Contents
2014
Volume: 10 Issue 3
21 Article(s)
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Research Article
Optical properties of Eu3+, Dy3+co-doped ZnO nanocrystals
Jin-zhao HUANG, Shi-you LIU, Nan-nan YAO, and Xi-jin XU
ZnO nanocrystals doped with trivalent europium ions (Eu3+) and dysprosium ions (Dy3+) were synthesized by the precipitation method. The structural and optical properties of the samples are investigated by the X-ray diffraction (XRD) and photoluminescence (PL). The results show that rare earth ions are incorporated intoZnO nanocrystals doped with trivalent europium ions (Eu3+) and dysprosium ions (Dy3+) were synthesized by the precipitation method. The structural and optical properties of the samples are investigated by the X-ray diffraction (XRD) and photoluminescence (PL). The results show that rare earth ions are incorporated into the lattice of ZnO, and the combination of blue, green and red emissions can be obtained. Specially, the emission can be obtained even under the nonresonant excitation of 320 nm, which is explained based on the energy transfer. The concentration quenching mechanism is also presented in this paper..
Optoelectronics Letters
- Publication Date: Oct. 12, 2017
- Vol. 10, Issue 3, 161 (2014)
Preparation and characterization of size controllable spherical silver nanoparticles
Ai-ling YANG, Shun-pin LI, Yu-jin WANG, Xi-chang BAO, and Ren-qiang YANG
By adjusting pH values of reactant system, the mass ratio of stabilizer/water and aging temperature, size controllable spherical silver nanoparticles (NPs) were synthesized. The properties of silver NPs are characterized by X-ray diffraction (XRD), transmission electron microscope (TEM) and ultraviolet visible (UV-VIS)By adjusting pH values of reactant system, the mass ratio of stabilizer/water and aging temperature, size controllable spherical silver nanoparticles (NPs) were synthesized. The properties of silver NPs are characterized by X-ray diffraction (XRD), transmission electron microscope (TEM) and ultraviolet visible (UV-VIS) absorption spectra. Within the pH values of 7.0-11.0, the aging temperature of 80 °C is better to improve silver NPs in shape to nearly sphere, concentrate size distribution and reduce aggregation than the aging temperature of 25 °C. The shape and dispersibility of silver NPs are the best when the pH of the reactant system is within 7.0-8.0. With pH of 7.5, aging at 80 °C, and stabilizer/ water mass ratio of 1%, the spherical silver NPs with sizes of 50-70 nm were synthesized. The results are promising to be used to synthesize core/shell NPs when silver NPs are as core..
Optoelectronics Letters
- Publication Date: Oct. 12, 2017
- Vol. 10, Issue 3, 164 (2014)
Synthesis and photoluminescence properties of the 4H-SiC/SiO2nanowires
Xia LIU, Lian-zhen CAO, Hang SONG, and Hong JIANG
4H-SiC/SiO2nanowires are synthesized and the temperature-dependent photoluminescence (PL) properties of the nanowires are studied. Their structure and chemical composition are studied by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), and Raman spectra. At room tempe4H-SiC/SiO2nanowires are synthesized and the temperature-dependent photoluminescence (PL) properties of the nanowires are studied. Their structure and chemical composition are studied by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), and Raman spectra. At room temperature, an ultraviolet PL peak and a green PL band are observed. From the PL spectrum measured in the temperature range from 80 K to 300 K, the free excition emission, donor bound excition emission and their multiple-phonon replicas have been observed in ultraviolet region, and their origins have been identified. Moreover, it has been found that the temperature dependence of the free exciton peak position can be described by standard expression, and the thermal activation energy values extracted from the temperature dependence of the free exciton and bound exciton peak integral intensity are about 40 meV and 181 meV, respectively..
Optoelectronics Letters
- Publication Date: Oct. 12, 2017
- Vol. 10, Issue 3, 168 (2014)
Design and experimental research on a visible-near infrared spatial modulating Fourier transform spectrometer based on micro multi-step mirrors
Yu-xin QIN, Jing-qiu LIANG, Zhong-zhu LIANG, Chao TIAN... and Wei-biao WANG|Show fewer author(s)
A type of spatial modulating micro Fourier transform spectrometer (FTS) based on micro multi-step mirrors (MMSMs) is designed and manufactured in this paper. The interference system is based on Michelson interferometer, using two MMSMs instead of plane mirrors in two arms. The recovered spectrum is simulated with diffeA type of spatial modulating micro Fourier transform spectrometer (FTS) based on micro multi-step mirrors (MMSMs) is designed and manufactured in this paper. The interference system is based on Michelson interferometer, using two MMSMs instead of plane mirrors in two arms. The recovered spectrum is simulated with different distances between MMSMs and the detector, and the influence of diffraction on the recovered spectrum is analyzed. The edge-enlarging method for the MMSMs is proposed to eliminate edge noise, and the influence of surface roughness of MMSMs on the recovered spectrum is also analyzed. Moreover, the way of manufacturing the MMSMs is investigated..
Optoelectronics Letters
- Publication Date: Oct. 12, 2017
- Vol. 10, Issue 3, 172 (2014)
A novel all-fiber micro-displacement sensor based on long period grating and tip structure
Zhi-yong BAI, Wei-gang ZHANG, She-cheng GAO, and Li WANG
A novel high sensitivity all-fiber micro-displacement sensor is proposed and experimentally demonstrated. This sensor consists of a long period fiber gating and a fiber tip, which is achieved only by a commercial arc discharge fusion splicer, and thus possesses a lower cost. The wavelength sensitivity of the proposed sA novel high sensitivity all-fiber micro-displacement sensor is proposed and experimentally demonstrated. This sensor consists of a long period fiber gating and a fiber tip, which is achieved only by a commercial arc discharge fusion splicer, and thus possesses a lower cost. The wavelength sensitivity of the proposed sensor could be up to 934 pm/μm, which is four times higher than that of the long period fiber grating (LPFG) with an air cavity structure. The intensity change sensitivity is -1.973 dB/μm..
Optoelectronics Letters
- Publication Date: Oct. 12, 2017
- Vol. 10, Issue 3, 176 (2014)
A thermally tunable terahertz bandpass filter with insulator- metal phase transition of VO2thin film
Wei LI, Sheng-jiang CHANG, Xiang-hui WANG, Lie LIN, and Jin-jun BAI
A terahertz bandpass filter with the sandwich structure consisting of thermally tunable vanadium dioxide (VO2) thin film, silica substrate and subwavelength rectangular Cu hole arrays is designed and theoretically analyzed. The results show that the transmittance of the filter can be actively tuned by controlling the tA terahertz bandpass filter with the sandwich structure consisting of thermally tunable vanadium dioxide (VO2) thin film, silica substrate and subwavelength rectangular Cu hole arrays is designed and theoretically analyzed. The results show that the transmittance of the filter can be actively tuned by controlling the temperature of VO2, the narrow band terahertz (THz) waves with the transmittance from 85.2% to 10.5% can be well selected at the frequency of 1.25 THz when the temperature changes from 50 ℃ to 80 ℃, and the maximum modulation depth of this terahertz bandpass filter can achieve 74.7%..
Optoelectronics Letters
- Publication Date: Oct. 12, 2017
- Vol. 10, Issue 3, 180 (2014)
Performance of Er3+-doped chalcogenide glass MOF amplifier applied for 1.53 μm band
Yuan-hui ZHENG, Ya-xun ZHOU, Xing-yan YU, Ya-wei QI... and Feng-jing YANG|Show fewer author(s)
?Tianjin University of Technology and Springer-Verlag Berlin Heidelberg 2014 A model of Er3+-doped chalcogenide glass (Ga5Ge20Sb10S65) microstructured optical fiber (MOF) amplifier under the excitation of 980 nm is presented to demonstrate the feasibility of it applied for 1.53 μm band optical communications. By solvin?Tianjin University of Technology and Springer-Verlag Berlin Heidelberg 2014 A model of Er3+-doped chalcogenide glass (Ga5Ge20Sb10S65) microstructured optical fiber (MOF) amplifier under the excitation of 980 nm is presented to demonstrate the feasibility of it applied for 1.53 μm band optical communications. By solving the Er3+population rate equations and light power propagation equations, the amplifying performance of 1.53 μm band signals for Er3+-doped chalcogenide glass MOF amplifier is investigated theoretically. The results show that the Er3+-doped chalcogenide glass MOF exhibits a high signal gain and broad gain spectrum, and its maximum gain for small-signal input (-40 dBm) exceeds 22 dB on the 300 cm MOF under the excitation of 200 mW pump power. Moreover, the relations of 1.53 μm signal gain with fiber length, input signal power and pump power are analyzed. The results indicate that the Er3++-doped Ga5Ge20Sb10S65MOF is a promising gain medium which can be applied to broadband amplifiers operating in the third communication window..
Optoelectronics Letters
- Publication Date: Oct. 12, 2017
- Vol. 10, Issue 3, 184 (2014)
Study of a novel pressure sensor based on optical microring resonator
Xin LI, Shi-liang GUO, Zhi-quan LI, and Ming YANG
We propose a novel pressure sensor based on the combination of the ring resonator with two straight waveguides and a two-end fixed beam. The principle of this device is acquiring the system static pressure by monitoring the changes in the transmission wavelength shift of the ring resonator with double waveguides. The nWe propose a novel pressure sensor based on the combination of the ring resonator with two straight waveguides and a two-end fixed beam. The principle of this device is acquiring the system static pressure by monitoring the changes in the transmission wavelength shift of the ring resonator with double waveguides. The numerical results show that the sensitivity of the system is up to 49.3 pm/kPa while the pressure range is 0—300 kPa. The thickness of the fixed beam is an important factor which impacts the sensitivity of the system. This device can provide support for fabricating high sensitivity and low cost micro pressure sensors..
Optoelectronics Letters
- Publication Date: Oct. 12, 2017
- Vol. 10, Issue 3, 188 (2014)
Autostereoscopic 3D flat panel display using an LCDpixel-associated parallax barrier
En-guo CHEN, and Tai-liang GUO
This letter reports an autostereoscopic three-dimensional (3D) flat panel display system employing a newly designed LCD-pixel-associated parallax barrier (LPB). The barrier’s parameters can be conveniently determined by the LCD pixels and can help to greatly simplify the conventional design. The optical system of the pThis letter reports an autostereoscopic three-dimensional (3D) flat panel display system employing a newly designed LCD-pixel-associated parallax barrier (LPB). The barrier’s parameters can be conveniently determined by the LCD pixels and can help to greatly simplify the conventional design. The optical system of the proposed 3D display is built and simulated to verify the design. For further experimental demonstration, a 508-mm autostereoscopic 3D display prototype is developed and it presents good stereoscopic images. Experimental results agree well with the simulation, which reveals a strong potential for 3D display applications..
Optoelectronics Letters
- Publication Date: Oct. 12, 2017
- Vol. 10, Issue 3, 191 (2014)
Preparation of multi-wavelength infrared laser diode
Ming-xi XUE, Zhi-bin CHEN, Wei-ming WANG, Xian-hong LIU... and Zhang-ya HOU|Show fewer author(s)
We prepare a new type of multi-wavelength infrared laser diode with four chips, three wavelengths (865 nm, 905 nm and 1064 nm) and two working modes (pulse and single). The preparation technology of the diode includes two key processes: heat-sink and packaging processing technique to package four different chips on a sWe prepare a new type of multi-wavelength infrared laser diode with four chips, three wavelengths (865 nm, 905 nm and 1064 nm) and two working modes (pulse and single). The preparation technology of the diode includes two key processes: heat-sink and packaging processing technique to package four different chips on a same heat-sink. The experimental results show that four output peak-wavelengths of the prototype diode all possess favorable stability..
Optoelectronics Letters
- Publication Date: Oct. 12, 2017
- Vol. 10, Issue 3, 194 (2014)
A tunable lighting system integrated by inorganic and transparent organic light-emitting diodes
Jing-jing ZHANG, Tao ZHANG, Ya-fang JIN, Shi-shen LIU... and Wei-hui WANG|Show fewer author(s)
A tunable surface-emitting integrated lighting system is constructed using a combination of inorganic light-emitting diodes (LEDs) and transparent organic LEDs (OLEDs). An RB two-color LED is used to supply red and blue light emission, and a green organic LED is used to supply green light emission. Currents of the LED A tunable surface-emitting integrated lighting system is constructed using a combination of inorganic light-emitting diodes (LEDs) and transparent organic LEDs (OLEDs). An RB two-color LED is used to supply red and blue light emission, and a green organic LED is used to supply green light emission. Currents of the LED and OLED are tuned to produce a white color, showing different Commission Internationale d’Eclairage (CIE) chromaticity coordinates and correlated color temperatures with a wide adjustable range. Such an integration can compensate for the lack of the LED’s luminance uniformity and the transparent OLED’s luminance intensity..
Optoelectronics Letters
- Publication Date: Oct. 12, 2017
- Vol. 10, Issue 3, 198 (2014)
Optical absorption enhancement of μc-SiGe:H films deposited via high pressure and high power
Tian-wei LI, Jian-jun ZHANG, Yu CAO, Zhen-hua HUANG... and Ying ZHAO|Show fewer author(s)
Hydrogenated microcrystalline silicon-germanium (μc-SiGe:H) films are fabricated by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD). The optical absorption coefficient and the photosensitivity of the μc-SiGe:H films increase dramatically by increasing the plasma power and deposition pressure simultHydrogenated microcrystalline silicon-germanium (μc-SiGe:H) films are fabricated by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD). The optical absorption coefficient and the photosensitivity of the μc-SiGe:H films increase dramatically by increasing the plasma power and deposition pressure simultaneously. Additionally, the microstructural properties of the μc-SiGe:H films are also studied. By combining Raman, Fourier transform infrared (FTIR) and X-ray fluoroscopy (XRF) measurements, it is shown that the Ge-bonding configuration and compactability of the μc-SiGe:H thin films play a crucial role in enhancing the optical absorption and optimizing the quality of the films via a significant reduction in the defect density..
Optoelectronics Letters
- Publication Date: Oct. 12, 2017
- Vol. 10, Issue 3, 202 (2014)
Preparation and characterization of cubic lattice ZnS:Na films with (111) preferred orientation
Shu-wen XUE, Jian CHEN, and Chang-wei ZOU
ZnS:Na thin films with (111) preferred orientation were deposited on glass substrates by vacuum evaporation method. The as-prepared films were annealed in flowing argon at 400—500 °C to improve the film crystallinity and electrically activate the dopants. The structural, optical and electrical properties of ZnS:NaZnS:Na thin films with (111) preferred orientation were deposited on glass substrates by vacuum evaporation method. The as-prepared films were annealed in flowing argon at 400—500 °C to improve the film crystallinity and electrically activate the dopants. The structural, optical and electrical properties of ZnS:Na films are investigated by X-ray diffraction (XRD), photoluminescence (PL), optical transmittance measurements and the four-point probe method. Results show that the as-prepared ZnS:Na films are amorphous, and exhibit (111) preferred orientation after annealing at 400 —500 °C. The PL emissions at 414 nm and 439 nm are enhanced due to the increase of the intrinsic defects induced by the thermal annealing. However, all the samples exhibit high resistivity due to the heavy self-compensation..
Optoelectronics Letters
- Publication Date: Oct. 12, 2017
- Vol. 10, Issue 3, 206 (2014)
Effect of SiO2on the thermal stability and spectroscopic properties of Er3+-doped tellurite glasses.
Shi-chao ZHENG, and Ya-xun ZHOU
Er3+-doped tellurite glass (TeO2-ZnO-Na2O) prepared using the conventional melt-quenching method is modified by introducing the SiO2, and its effects on the thermal stability of glass host and the 1.53 μm band spectroscopic properties of Er3+are investigated by measuring the absorption spectra, 1.53 μm band fluorescencEr3+-doped tellurite glass (TeO2-ZnO-Na2O) prepared using the conventional melt-quenching method is modified by introducing the SiO2, and its effects on the thermal stability of glass host and the 1.53 μm band spectroscopic properties of Er3+are investigated by measuring the absorption spectra, 1.53 μm band fluorescence spectra, Raman spectra and differential scanning calorimeter (DSC) curves. It is found that for Er3++-doped tellurite glass, besides improving its thermal stability, introducing SiO2is helpful for the further improvement of the fluorescence full width at half maximum (FWHM) and bandwidth quality factor. The results indicate that the prepared Er3+-doped tellurite glass containing an appropriate amount of SiO2has good prospect as a candidate of gain medium applied for 1.53 μm broadband amplifier..
Optoelectronics Letters
- Publication Date: Oct. 12, 2017
- Vol. 10, Issue 3, 209 (2014)
Resonant cavity enhanced photoluminescence of tensile strained Ge/SiGe quantum wells on silicon-on-insulator substrate
Li-qun CHEN, Yang-hua CHEN, and Cheng LI
The tensile strained Ge/SiGe multiple quantum wells (MQWs) grown on a silicon-on-insulator (SOI) substrate were fabricated successfully by ultra-high chemical vapor deposition. Room temperature direct band photoluminescence from Ge quantum wells on SOI substrate is strongly modulated by Fabry-Perot cavity formed betweeThe tensile strained Ge/SiGe multiple quantum wells (MQWs) grown on a silicon-on-insulator (SOI) substrate were fabricated successfully by ultra-high chemical vapor deposition. Room temperature direct band photoluminescence from Ge quantum wells on SOI substrate is strongly modulated by Fabry-Perot cavity formed between the surface of Ge and the interface of buried SiO2. The photoluminescence peak intensity at 1.58 μm is enhanced by about 21 times compared with that from the Ge/SiGe quantum wells on Si substrate, and the full width at half maximum (FWHM) is significantly reduced. It is suggested that tensile strained Ge/SiGe multiple quantum wells are one of the promising materials for Si-based microcavity light emitting devices..
Optoelectronics Letters
- Publication Date: Oct. 12, 2017
- Vol. 10, Issue 3, 213 (2014)
Nano-ZnO film preparation at low temperature and the optical indices calculation
Ai-ling YANG, Xi-chang BAO, Shun-pin LI, Ren-qiang YANG... and Liang SUN|Show fewer author(s)
The refractive indices of thin films based on Kramers-Kronig theory are corrected. And the correction theory is used to determine the optical indices of nano-ZnO thin films prepared by low temperature sol-gel method. The calculated results indicate that in the visible (Vis) range, the refractive indices of nano-ZnO thiThe refractive indices of thin films based on Kramers-Kronig theory are corrected. And the correction theory is used to determine the optical indices of nano-ZnO thin films prepared by low temperature sol-gel method. The calculated results indicate that in the visible (Vis) range, the refractive indices of nano-ZnO thin films exhibit a slight abnormal dispersion, while in the ultraviolet (UV) region, the refractive indices increase with wavelengths increasing (normal dispersion). But the refractive indices show complex change near the absorption edge. The maximum refractive index (1.95) of nano-ZnO thin films within UV range at low temperature annealing is much lower than that of the films annealed at high temperature. The absorption and refractive indices are closely related to the defects in nano-ZnO thin films..
Optoelectronics Letters
- Publication Date: Oct. 12, 2017
- Vol. 10, Issue 3, 216 (2014)
Simultaneous generation of independent WCDMA and millimeter-wave signals using a dual-electrode MZM in ROF systems
Xiang-yue YING, Tie-feng XU, Tai-jun LIU, Qiu-hua NIE... and Jun LI|Show fewer author(s)
In this paper, a novel radio-over-fiber (ROF) scheme to simultaneously generate and transmit wideband code division multiple access (WCDMA) and millimeter-wave (MMW) signals by using a single dual-electrode Mach-Zehnder modulator (MZM) is proposed. There is no apparent nonlinearity induced by the ROF system. By employiIn this paper, a novel radio-over-fiber (ROF) scheme to simultaneously generate and transmit wideband code division multiple access (WCDMA) and millimeter-wave (MMW) signals by using a single dual-electrode Mach-Zehnder modulator (MZM) is proposed. There is no apparent nonlinearity induced by the ROF system. By employing this analog ROF signal transmission technique, the highly transparent fiber-wireless networks, which are ideal for multi-standard wireless system operation, can be realized..
Optoelectronics Letters
- Publication Date: Oct. 12, 2017
- Vol. 10, Issue 3, 221 (2014)
Experimental evaluation of the BER performance in optical OFDM system based on discrete Hartley transform precoding
Zhong-peng WANG, Fang-ni CHEN, Ming-wei WU, Ming CHEN... and Lin CHEN|Show fewer author(s)
We experimentally assess the bit error rate (BER) performance of an intensity modulation/direct detection (IM/DD) optical orthogonal frequency division multiplexing (OFDM) system based on discrete Hartley transform (DHT) precoding in single-mode fiber (SMF) link for 2.5 Gbit/s quadrature phase shift keying (QPSK) OFDM We experimentally assess the bit error rate (BER) performance of an intensity modulation/direct detection (IM/DD) optical orthogonal frequency division multiplexing (OFDM) system based on discrete Hartley transform (DHT) precoding in single-mode fiber (SMF) link for 2.5 Gbit/s quadrature phase shift keying (QPSK) OFDM symbol rate. The experimental results show that for the optical OFDM system based on DHT-precoding, the receiver sensitivity at the BER of 10-4after 100 km SMF transmission is about 1.5 dBm better than that of the original QPSK OFDM signal, and the DHT-precoded OFDM QPSK signal can achieve approximately 1.3 dB of peak-to-average power ratio (PAPR) reduction..
Optoelectronics Letters
- Publication Date: Oct. 12, 2017
- Vol. 10, Issue 3, 224 (2014)
Tunable modulation format conversion based on spectral line-by-line pulse shaper for all-optical signal processing
Ai-ling ZHANG, and Meng-chao YANG
A tunable modulation format converter based on spectral line-by-line pulse shaper is proposed to realize different format conversions. The pulse shaper works as a format converter by setting its frequency response equivalent to the transform function between two formats. The working principles show that the format convA tunable modulation format converter based on spectral line-by-line pulse shaper is proposed to realize different format conversions. The pulse shaper works as a format converter by setting its frequency response equivalent to the transform function between two formats. The working principles show that the format converter is suitable for different formats by adjusting its frequency response. Examples of format conversion from return to zero differential phase-shift keying (RZ-DPSK) to on-off keying (OOK) with different data packets and from return to zero (RZ) to non-return to zero (NRZ) are given. The results show that the format converter is not only suitable for different formats but also for random data packets..
Optoelectronics Letters
- Publication Date: Oct. 12, 2017
- Vol. 10, Issue 3, 228 (2014)
Widely tunable chaotic fiber laser for WDM-PON detection
Juan ZHANG, Ling-zhen YANG, Nai-jun XU, Juan-fen WANG... and Xiang-lian LIU|Show fewer author(s)
A widely tunable high precision chaotic fiber laser is proposed and experimentally demonstrated. A tunable fiber Bragg grating (TFBG) filter is used as a tuning element to determine the turning range from 1533 nm to 1558 nm with a linewidth of 0.5 nm at any wavelength. The wide tuning range is capable of supporting 32 A widely tunable high precision chaotic fiber laser is proposed and experimentally demonstrated. A tunable fiber Bragg grating (TFBG) filter is used as a tuning element to determine the turning range from 1533 nm to 1558 nm with a linewidth of 0.5 nm at any wavelength. The wide tuning range is capable of supporting 32 wavelength-division multiplexing (WDM) channels with 100 GHz channel spacing. All single wavelengths are found to be chaotic with 10 GHz bandwidth. The full width at half maximum (FWHM) of the chaotic correlation curve of the different wavelengths is on a picosecond time scale, thereby offering millimeter spatial resolution in WDM detection..
Optoelectronics Letters
- Publication Date: Oct. 12, 2017
- Vol. 10, Issue 3, 232 (2014)
A non-contact gear measurement method based on laser vision
Li-mei SONG, Ming-cui QIN, Zong-yan LI, Yan-gang YANG, and Da-peng LI
In order to classify the gears and achieve high precision measurement results, a non-contact gear measurement system based on the laser vision is developed in this paper. The laser vision precision measurement method (LVPMM) is proposed to ensure the accuracy. Experimental results indicate that the gear measuring uncerIn order to classify the gears and achieve high precision measurement results, a non-contact gear measurement system based on the laser vision is developed in this paper. The laser vision precision measurement method (LVPMM) is proposed to ensure the accuracy. Experimental results indicate that the gear measuring uncertainty is 2.1 μm. The precision can satisfy the gear measurement requirements for two-grade or under two-grade standard gears in industry, and can classify the gears very well..
Optoelectronics Letters
- Publication Date: Oct. 12, 2017
- Vol. 10, Issue 3, 237 (2014)
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