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2020
Volume: 3 Issue 4
3 Article(s)
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Original Article
Off-axis multi-wavelength dispersion controlling metalens for multi-color imaging
Kaihua Dou, Xin Xie, Mingbo Pu, Xiong Li... and Xiangang Luo|Show fewer author(s)
Dispersion control is crucial in optical systems, and chromatic aberration is an important factor affecting imaging quality in imaging systems. Due to the inherent property of materials, dispersion engineering is complex and needs to trade off other aberration in traditional ways. Although metasurface offers an effectiDispersion control is crucial in optical systems, and chromatic aberration is an important factor affecting imaging quality in imaging systems. Due to the inherent property of materials, dispersion engineering is complex and needs to trade off other aberration in traditional ways. Although metasurface offers an effective method to overcome these limits and results in well-engineered dispersion, off-axis dispersion control is still a challenging topic. In this paper, we design a single-layer metalens which is capable of focusing at three wavelengths (473 nm, 532 nm, and 632 nm) with different incident angles (0°, -17° and 17°) into the same point. We also demonstrate that this metalens can provide an alternative for the bulky color synthetic prism in a 3-chips digital micromirror device (DMD) laser projection system. Through this approach, various off-axis dispersion controlling optical devices could be realized..
Opto-Electronic Advances
- Publication Date: Apr. 20, 2020
- Vol. 3, Issue 4, 190005-1 (2020)
Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates
Akhil Raj Kumar Kalapala, Dong Liu, Sang June Cho, Jeongpil Park... and Weidong Zhou|Show fewer author(s)
We report here an optically pumped deep UV edge emitting laser with AlGaN multiple quantum wells (MQWs) active region grown on AlN substrate by low pressure organometallic vapor phase epitaxy (LP-OMVPE) in a high-temperature reactor. The 21 period Al0.53Ga0.47N/Al0.7Ga0.3N MQWs laser structure was optically pumped usinWe report here an optically pumped deep UV edge emitting laser with AlGaN multiple quantum wells (MQWs) active region grown on AlN substrate by low pressure organometallic vapor phase epitaxy (LP-OMVPE) in a high-temperature reactor. The 21 period Al0.53Ga0.47N/Al0.7Ga0.3N MQWs laser structure was optically pumped using 193 nm deep UV excimer laser source. A laser peak was achieved from the cleaved facets at 280.3 nm with linewidth of 0.08 nm at room temperature with threshold power density of 320 kW/cm2. The emission is completely TE polarized and the side mode suppression ratio (SMSR) is measured to be around 14 dB at 450 kW/cm2..
Opto-Electronic Advances
- Publication Date: Apr. 20, 2020
- Vol. 3, Issue 4, 190025-1 (2020)
Passively Q-switched Tm/Ho composite laser
Haizhou Huang, Jinhui Li, Jing Deng, Yan Ge... and Wenxiong Lin|Show fewer author(s)
We explored Q-switching mechanism for the newly proposed Tm/Ho composite laser via developing a hybrid resonator for separating the intra-cavity Tm laser modulated by the saturable absorber (SA). With a Cr:ZnSe SA, successful passively Q-switching process with the maximum average output power of 474 mW and the shortestWe explored Q-switching mechanism for the newly proposed Tm/Ho composite laser via developing a hybrid resonator for separating the intra-cavity Tm laser modulated by the saturable absorber (SA). With a Cr:ZnSe SA, successful passively Q-switching process with the maximum average output power of 474 mW and the shortest pulse width of 145 ns were obtained at the pulse repetition frequency of 7.14 kHz, where dual wavelength oscillation in both 2090 nm and 2097 nm was observed. This work provides an effective way for a direct laser diode (LD) pumped Q-switched Ho laser, which is compact and accessible. Furthermore, the current SA could be replaced by the 2D materials with broadband saturable absorption such as topological insulators or transition-metal dichalcogenides for seeking novel PQS lasers..
Opto-Electronic Advances
- Publication Date: Apr. 20, 2020
- Vol. 3, Issue 4, 190031-1 (2020)
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