HfO 2/SiO 2 front and back facet coatings of 808 nm SQW semiconductor laser has been fabricated with Plasma Assisted Electron Beem Deposition (Plasma-Ion Assisted Deposition) method.Front AR coating reflectivity is as low as 12.2% and back HR coating is as high as 97.9%.The output power is improved 79%,external different quantum efficiency improved 80%.The output efficiency increased from 22.2% to 39.8% for 100 μm wide 1000 μm-cavity length device.