In the aspect of solid-liquid interface control, there are many studies on mature semiconductors such as Si, but few studies on indium antimonide(InSb)materials. The effects of crystal pulling speed, rotation speed and crucible rotation speed on the shape of the solid-liquid interface during the growth of the InSb crystal in equal diameter segment were simulated and the actual crystal growth experiment was carried out. The results show that these three growth parameters have a certain effect on the smooth control of the solid-liquid interface shape. A stable solid-liquid interface control method is obtained, which lays the foundation for subsequent InSb materials with lower dislocation density and more uniform radial electrical parameter distribution.