[1] Mao X S, Inoue D, Kato S et al. Amplitude-modulated laser radar for range and speed measurement in car applications[J]. IEEE Transactions on Intelligent Transportation Systems, 13, 408-413(2012).
[2] Carmer D C, Peterson L M. Laser radar in robotics[J]. Proceedings of the IEEE, 84, 299-320(1996).
[3] Schwarz B. Mapping the world in 3D[J]. Nature Photonics, 4, 429-430(2010).
[4] Fürstenberg K, Ahlers F, Meyer G, Valldorf J. Development of a low-cost automotive laser scanner-the EC Project MiniFaros[M]. Advanced microsystems for automotive applications 2011, 149-158(2011).
[5] Coffey V C. Imaging in 3-D: killer apps coming soon to a device near you[J]. Optics and Photonics News, 25, 36-43(2014).
[7] Chang J Y, Xiong C, Qi Q et al. 1550 nm high-power fundamental transverse mode semiconductor laser and its temperature characteristics[J]. Acta Optica Sinica, 43, 0714003(2023).
[8] Wang Z. Study on 1550 nm high power semiconductor pulsed laser[D], 2-4(2018).
[9] Lowery A J, Gurney P C R, Wang X H et al. Time-domain simulation of photonic devices, circuits, and systems[J]. Proceedings of SPIE, 2693, 624-635(1996).
[10] Bae H J, Cho J H, Sung H K. Modulation performance enhancement of directly modulated injection-locked semiconductor lasers using an equivalent electrical circuit[J]. Electronics, 10, 2409(2021).
[11] Morishita M, Ohmi T, Nishizawa J I. Impedance characteristics of double-hetero structure laser diodes[J]. Solid-State Electronics, 22, 951-962(1979).
[12] Esquivias I, Weisser S, Romero B et al. Carrier dynamics and microwave characteristics of GaAs-based quantum-well lasers[J]. IEEE Journal of Quantum Electronics, 35, 635-646(1999).
[13] Javro S A, Kang S M. Transforming Tucker’s linearization laser rate equations to a form that has a single solution regime[J]. Journal of Lightwave Technology, 13, 1899-1904(1995).
[14] Horri A, Faez R. Large signal analysis of double quantum well transistor laser[J]. Optical and Quantum Electronics, 45, 389-399(2013).
[15] Shen C C, Hsu T C, Yeh Y W et al. Design, modeling, and fabrication of high-speed VCSEL with data rate up to 50 Gb/s[J]. Nanoscale Research Letters, 14, 276-281(2019).
[16] Chen Y, Wang W. Frequency response characteristics of vertical-cavity surface emitting lasers based on parasitic network[J]. Laser & Optoelectronics Progress, 59, 0514005(2022).
[17] Liu T P, Wang Z B. High-power semiconductor laser equivalent circuit model with parasitic parameter[J]. Journal of North University of China (Natural Science Edition), 35, 750-756(2014).
[18] Chen W Y[M]. Optoelectronic devices circuit model and the circuit-level simulation of OEIC, 204-253(2001).
[19] Kostamovaara J, Huikari J, Hallman L et al. On laser ranging based on high-speed/energy laser diode pulses and single-photon detection techniques[J]. IEEE Photonics Journal, 7, 7800215(2015).
[20] Wang J H, Yao H B, Liu Z X. Analysis of laser emitting circuit with high-power and short-pulse[J]. Infrared and Laser Engineering, 39, 1049-1054(2010).
[21] Du J Y, Zhao Y Q, Ye M et al. Study on driving circuit of narrow pulse width and large current semiconductor laser[J]. Laser & Optoelectronics Progress, 59, 0114008(2022).
[23] Rajabi K, Wang L, Hao Z et al. Numerical study of transient oscillation in gain-switched in GaN-based laser diodes[J]. IEEE Journal of Selected Topics in Quantum Electronics, 23, 1-6(2017).
[24] Bean D M, Qian Y, Pulver D E. High-power infrared semiconductor diode light emitting device[P].
