Jinlong ZHANG, Shuangying LI, Qize WU, Hongfei JIAO, Xinbin CHEN, Zhanshan WANG. Research Progress of Thin Film Devices in the Far Ultraviolet （Invited）[J]. Acta Photonica Sinica, 2024, 53(11): 1131001
- Acta Photonica Sinica
- Vol. 53, Issue 11, 1131001 (2024)
Fig. 1. Refractive index n and band gap of ultraviolet thin film materials
Fig. 2. Transmittance of common materials in FUV
Fig. 3. Refractive index n and extinction coefficient k of MgF2 obtained by ZUKIC M et al. using a least-squares method
Fig. 4. Refractive index n and extinction coefficient k of MgF2 obtained by Tongji University
Fig. 5. Refractive index n and extinction coefficient k of MgF2 obtained by MARCOS D R et al. using Kramers-Kronig
Fig. 6. Reflectivity of Al+MgF2 mirrors
Fig. 7. Reflectivity of Al+eMgF2 mirrors fabricated at varying substrate temperatures
Fig. 8. Reflectivity of Al+LiF+eMgF2 mirrors stored in 20%，40% and 80% RH
Fig. 9. Reflectivity of Al+LiF mirrors at 110 nm
Fig. 10. Transmittance of narrowband （Al/MgF2）^3 filters prepared by LARRUQUERT J I et al.
Fig. 11. Design and test results of （Al/MgF2）n filter
Fig. 12. Reflectivity of narrowband LaF3/MgF2 multilayers fabricated by ZUKIC M et al
Fig. 13. Reflectivity of narrowband LaF3/MgF2 multilayer designed by WANG Xiaodong et al
Fig. 14. Reflectivity of narrowband LaF3/MgF2 multilayer fabricated by LÓPEZ-REYES P et al
Fig. 15. Reflectivity of narrowband LaF3/MgF2 multilayers fabricated by Tongji
Fig. 16. Reflectivity of Al+LiF+SiC+LiF fabricated by LARRUQUERT J I et al
Fig. 17. Reflectivity of Al+LiF+B4C fabricated by Tongji University
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Table 1. Optical properties of narrowband LaF3/MgF2 multilayers
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