In2Se3 2D layered materials have excellent photoelectric, thermoelectric and ferroelectric properties. At present, most of the In2Se3 materials are obtained by mechanical exfoliation of bulk In2Se3 prepared by the complicated chemical vapor transport (CVT) method with long time and high cost. Compared with CVT method, the Bridgman (B-S) method has the advantages of simple preparation process, high efficiency and low cost. In this paper, the bulk In2Se3 prepared by CVT and B-S method were mechanically exfoliated and transferred to SiO2/Si(111) substrates to obtain the corresponding two-dimensional layered In2Se3 samples. The surface morphology, lattice vibration spectrum and crystalline quality of both samples were also measured by atomic force microscopy (AFM), laser Raman and X-ray diffraction (XRD). The results show that the samples prepared and exfoliated by B-S method have almost the same surface atomic level flatness and single crystal crystalline quality as those prepared and exfoliated by CVT method. This paper provides a more economical and practical way to obtain high-quality two-dimensional layered In2Se3 materials.