Deep-Ultraviolet Laser-Diode Radiation Recombination Properties Based on Double-Concave Waveguide Layers

Yuan Xu; Shiqin Wei; Pengfei Zhang; Yao Wang; Fang Wang; Yuhuai Liu

doi:10.3788/LOP221705

Journals >Laser & Optoelectronics Progress >Volume 60 >Issue 15 >Page 1514007 > Article

Laser & Optoelectronics Progress
Vol. 60, Issue 15, 1514007 (2023)

Deep-Ultraviolet Laser-Diode Radiation Recombination Properties Based on Double-Concave Waveguide Layers

Yuan Xu¹, Shiqin Wei¹, Pengfei Zhang¹, Yao Wang¹..., Fang Wang^1,2,* and Yuhuai Liu^1,2,3,4,**|Show fewer author(s)

Author Affiliations

¹National Center for International Joint Research of Electronic Materials and Systems, School of Information Engineering, Zhengzhou University, Zhengzhou 450001, Henan, China

²Research Institute of Sensors, Zhengzhou University, Zhengzhou 450001, Henan, China

³Zhengzhou Way Do Electronics Technology Co., Ltd., Zhengzhou 450001, Henan, China

⁴Industrial Technology Research Institute Co., Ltd., Zhengzhou University, Zhengzhou 450001, Henan, China

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DOI: 10.3788/LOP221705 Cite this Article Set citation alerts

Yuan Xu, Shiqin Wei, Pengfei Zhang, Yao Wang, Fang Wang, Yuhuai Liu. Deep-Ultraviolet Laser-Diode Radiation Recombination Properties Based on Double-Concave Waveguide Layers[J]. Laser & Optoelectronics Progress, 2023, 60(15): 1514007 Copy Citation Text

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