The recent progress in the preparation of silicon nanowires is introduced, the growth pattern of the two different (“top-down” and “bottom-up”) and the preparation methods of different growth mode are reviewed, such as chemical vapor deposition, molecular beam epitaxy, laser ablation, oxide auxiliary growth, the solution method, electron beam lithography, nano-imprinting lithography, and metal auxiliary chemical etching, etc, and the advantages and disadvantages of these preparation methods are discussed, The research status of two typical growth directions (plane and vertical) of silicon nanowires is summarized. In the end, the application of silicon nanowires in electronic devices, sensors, and solar cells is summarized, and the development trend has prospected.