After He ion implantation, p-GaAs will obtain higher resistivity than before. To improve the catastrophic optical damage (COD) level of 808 nm GaAs/AlGaAs laser diode bar, about 25 μm-long current non-injection areas are introduced near both facets by He ion implantation. The COD level of a conventional 1 cm laser diode bar with 19 emitters is 30W, while the He ion implantation 1 cm laser diode bar exhibits no COD failure at 42.7 W.