Silicon photonic integration has generated an outstanding interest for optical telecommunications, signal processing and for inter and intra-chip interconnects in microelectronic systems. The development of basic building blocks such as waveguides, input/output (I/O) couplers, wave-division multiplexers, modulators and photodetectors has reached such a performance level, the silicon photonics integrated circuit is now considered as an emerging challenge in the research area, because the silicon-based laser is the technical difficulty. The progress of the hybrid integrated III-V/Si lasers in recent years is reviewed, then our recent work on the hybrid integrated III-V/Si lasers is reported. A novel III-V/silicon hybrid single-mode laser is designed and fabricated by adding the micro-structure into the hybrid integrated silicon laser. The laser operates at C band, and the AlGaInAs gain structure is bonded onto a patterned silicon-on insulator wafer (Si/SiO2/Si) directly. The novel mode selection mechanism based on a periodic micro-structured silicon waveguide is applied. At room temperature, 0.85 mW and 3.5 mW output power in continuous-wave and pulse-wave regimes is obtained, respectively. The side-mode suppression ratio of 25 dB is obtained from the experiments.