In0.53Ga0.47As/InP Avalanche Photodiode (APD) with low dark current, wide-range response is prepared by molecular beam epitaxy and open-tube zinc diffusion method. The dark current is less than 10 nA at 0.95Vb (Vb is the avalanche breakdown voltage), and the capacitance density is as low as 1.43×10-8 F/cm2 when the bias voltage is -5 V. The response range of APD is 50 nW~20 mW and the responsibility is up to 1.13 A/W under 1 310 nm infrared laser at 30 V reverse bias voltage. The breakdown voltage and punch-through voltage are investigated by changing concentration of the charge layer and thickness of the multiplication layer. The result shows that the punch-through voltage increases linearly, conversely, the breakdown voltage decreases linearly with increasing concentration of the charge layer. Further, the punch-through voltage increases linearly and breakdown voltage also increases with increasing thickness of the multiplication layer, while the surface density of charge layer is 4.8×1012 cm-2. Through optimizing SAGCM-APD device structure, the APD device achieves a 25 V punch-through voltage and a 57 V breakdown voltage, with low dark current, and wide-range response characteristics.