To obtain the high-voltage high-repetition-rate pulse output with a half-width of about 10 ns required for plasma research, two sets of high-voltage switch modules composed of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) switches in series are used. By combining traditional capacitor energy storage pulse generation circuits with pulse tail cutting circuits, narrow pulses are generated. Based on the actual working requirements of the switches, adaptive design and simulation optimization of the narrow pulse generation circuit are carried out; according to the optimization results, an experimental device for narrow pulse generation circuit is built. After testing, a pulse output with a peak voltage about 10 kV, a half-width about 10 ns, and a front edge about 6 ns is obtained on a load of 500 Ω.