Optical and Electrical Characteristics of In-doped HgCdTe

Jia-jia NIU; Peng-chao LIU; Dan WANG; Qian LI; Wei-lin SHE

doi:10.3969/j.issn.1672-8785.2022.11.002

Journals >INFRARED >Volume 43 >Issue 10 >Page 8 > Article

INFRARED
Vol. 43, Issue 10, 8 (2022)

Optical and Electrical Characteristics of In-doped HgCdTe

Jia-jia NIU^*, Peng-chao LIU, Dan WANG, Qian LI, and Wei-lin SHE

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[in Chinese]

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DOI: 10.3969/j.issn.1672-8785.2022.11.002 Cite this Article

NIU Jia-jia, LIU Peng-chao, WANG Dan, LI Qian, SHE Wei-lin. Optical and Electrical Characteristics of In-doped HgCdTe[J]. INFRARED, 2022, 43(10): 8 Copy Citation Text

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References

[1] Lindle J R, Bewley W W, Vurgaftman I, et al. HgCdTe Negative Luminescence Devices with High Internal and External Efficiencies in the Midinfrared [J]. Appl Phys Lett, 2007, 90: 241119.

[2] Lyon T J, Rajavel R D, Vigil J A, et al. Molecular-beam Epitaxial Growth of HgCdTe Infrared Focal-plane Arrays on Silicon Substrates for Midwave Infrared Applications [J]. J Electronic Mat, 1998, 27(6): 550-555.

[3] Lee T S, Garland J, Grein C H, et al. Correlation of Arsenic Incorporation and Its Electrical Activation in MBE HgCdTe [J]. J Electronic Mat, 2000, 29(6): 869-872.

[4] Shao J, Lu W, Lu X, et al. Modulated Photoluminescence Spectroscopy with a Step-scan Fourier Transform Infrared Spectrometer [J]. Rev Sci Instrum, 2006, 77: 063104.

NIU Jia-jia, LIU Peng-chao, WANG Dan, LI Qian, SHE Wei-lin. Optical and Electrical Characteristics of In-doped HgCdTe[J]. INFRARED, 2022, 43(10): 8

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