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    Journals >Acta Photonica Sinica >Volume 34 >Issue 1 >Page 11 > Article
    • Acta Photonica Sinica
    • Vol. 34, Issue 1, 11 (2005)
    Passive Q-switched Modelocking Diode-end-pumped Yb∶YAG with Surface-state Type of Semiconductor Saturable Absorption Mirror
    1, 1, 2, and 2
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  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: Cite this Article
    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Passive Q-switched Modelocking Diode-end-pumped Yb∶YAG with Surface-state Type of Semiconductor Saturable Absorption Mirror[J]. Acta Photonica Sinica, 2005, 34(1): 11 Copy Citation Text show less

    Abstract

    A new type of surface-state semiconductor saturable absorption mirror was introduced, with which passive Q-switched modelocking of diode-end-pumped Yb∶ YAG laser was realized. At the 1.4 W of pumping power, Q-switched modelocking seires was obtained, which has 1 mW average output and 200 MHz frequency.

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Passive Q-switched Modelocking Diode-end-pumped Yb∶YAG with Surface-state Type of Semiconductor Saturable Absorption Mirror[J]. Acta Photonica Sinica, 2005, 34(1): 11
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