[1] M Z Tidrow，W R Dyer. Infrared sensors for ballistic missile defense [J]. Infrared Physics & Technology，2001，42（3/5）:333-336.
[3] H Mohseni，A Tahraoui，J Wojkowski，et al. Very long wavelength infrared type-II detectors operating at 80 K [J]. Applied Physics Letters，2000，77（11）:1572-1574.
[4] Meimei Z Tidrow.Type II strained layer superlattice: A potential future IR solution[J]. Infrared Physics & Technology， 2009，52（6）:322-325.
[5] Darin Hoffman，Binh-Minh Nguyen，Edward Kwei-wei Huang，et al. The effect of doping the M-barrier in very long-wave type-II InAs/GaSb heterodiodes [J]. Applied Physics Letters，2008，93（3）:031107
[6] Manijeh Razeghi，Binh-Minh Nguyen. Band gap tunability of Type II Antimonide-based superlattices[J]. Physics Procedia，2010，（3）:1207-1212.
[7] Vaidya Nathan，Manijeh Razeghi. Type II Superlattice Infrared Detectors and Focal Plane Arrays[C]//SPIE，2007， 6542:654209
[8] L Zheng，M Z Tidrowb，A Novello，et al. Type II Strained Layer Superlattice: A Potential Infrared Sensor Material for Space[C]//SPIE，2008，6900:69000F
[9] Paul Harrision. Quantum wells，wires and dots—Theoretical and computational physics of semiconductor nanostructure（second edition）[M]. England：John Wiley & Sons，Ltd，2005.
[10] F Fuchs，L Burkle，R Hamid，et al. Optoelectronic properties of photodiodes for the mid- and far-infrared based on the InAs/GaSb/AlSb materials family[C]//SPIE，2001，4288:171-182.
[11] Robert Rehm，Martin Walther，Johannes Schmitz，etal. InAs/GaSb superlattice focal plane arrays for high-resolution thermal imaging[C]// SPIE，2005，5957: 595707.
[12] Y Wei，M Razeghi. Modeling of type-II InAs/GaSb superlattices using an empirical tight binding method and interface engineering[J]. Physical Review B，2004，69（8）:085316
[13] M Razeghi，H Mohseni，G J Brown. Type-II Binary Superlattices for Infrared Detector[J]. Journal of the Korean Physical Society，2001，39（12）:S257-S263.
[14] Gail J Brown. Type-II InAs/GaInSb Superlattices for In-frared Detection: an Overview[C]//SPIE，2005，5783: 65-77.
[15] K A Anselm，H Ren，M Viela，et al. Long-wavelength infrared InAs/InGaSb type-II superlattice photovoltaic detectors[C]// SPIE，2001，4288:183-190.
[16] H J Haugan，F Szmulowicz，G J Brown，et al. Band gap tuning of InAs ∕ GaSb type-II superlattices for mid-infrared detection[J]. Journal of Applied Physics， 2004，96（5）:2580-2585.
[17] H Mohseni，Y Wei，Razeghi. High-performance type-II InAs/GaSb superlattice photodiodes[C]//SPIE，2001， 4288:191-199.
[18] Y Wei，A Gin，M Razeghi，et al. Advanced InAs/GaSb superlattice photovoltaic detectors for very long wavelength infrared applications[J]. Applied Physics Letters， 2002，80（18）: 3262-3264.
[19] YWei，A Gin，M Razeghi，et al. Type II InAs/GaSb superlattice photovoltaic detectors with cutoff wavelength approaching 32 μm [J]. Applied Physics Letters，2002， 81（19）:3675-3677.
[20] H Mohseni，M Razeghi，G J Brown，et al. High-perfor mance InAs/GaSb superlattice photodiodes for the very long wavelength infrared range[J]. Applied Physics Letters， 2001，78（15）: 2107-2109.
[21] Mohamed Henini，Manijeh Razeghi. Handbook of infra red detection technologies[M]. Oxford，UK：Elsevier Science Ltd.，2002.
[22] M Razeghi，Y Wei，A Gin，et al. High performance Type II InAs/GaSb superlattices for mid，long，and very long wavelength infrared focal plane arrays[C]//SPIE，2005，5783:86-97.
[23] Cory J Hill，Alexander Soibel，Sam A Keo，et al. Demonstration of large format mid-wavelength infrared focal plane arrays based on superlattice and BIRD detector structures[J]. Infrared Physics & Technology，2009， 52（6）:348-352.
[24] V Nathan，A Anselm，C H Lin，et al. InAs/InGaSb Type2 Strained Layer Superlattice IR Detectors[C]//SPIE，2002，4650:185-198.
[25] E Aifer，E Jackson，B Bennett，et al. Suppression of bulk defects in antimonide superlattice infrared photodiodes[C]//Material Research Society Symposium Proceedings， 2002，722: K10.1.1-12.
[26] Binh-Minh Nguyen，Darin Hoffman，Pierre-Yves De launay，et al. Very high performance LWIR and VL WIR Type-II InAs/GaSb superlattice photodiodes with M-structure barrier[C]//SPIE，2008，7082:708205
[27] Gail J Brown，Frank Szmulowicz. InAs/InGaSb super lattices for very long wavelength infrared detection[C]//SPIE，2001，4288:200-208.
[28] Seong-gon Kim，Sungho Kim，Jun Shen，et al. Interface Structures of III–V Semiconductor Heterostruc-tures[J]. International Journal of Quantum Chemistry，2003，95: 561-571.
[29] Leye Aina，Harry Hier，Ayub Fathimulla，et al. High detectivity dilute nitride strained layer superlattice de-tectors for LWIR and VLWIR applications[J]. Infrared Physics & Technology，2009，52:310-316.
[30] Seung-Hwan Kim，Sheng S Li. Theoretical investigation of InAs/GaInSb type-II superlattice. infrared detectors for longwaveleng th and very longwavelength infrared applications[J]. Physica E，2003（16）:199-208.
[31] M Razeghi，Y Wei，A Hood，et al. Type II Superlattice Photodetectors for MWIR to VLWIR Focal Plane Arrays[C]//SPIE，2006，6206:62060N
[32] G J Brown，F Szmulowicz，K Mahalingam，et al. Recent Advances in InAs/GaSb Superlattices for Very Long Wavelength Infrared Detection[C]//SPIE，2003， 4999:457-466.
[33] K A Anselm，H Ren，M Viela，et al. Long-wavelength infrared InAs/InGaSb type-II superlattice photovoltaic detectors [C]//SPIE，2001，4288:183-190.
[34] C-H Lin，AAnselm，C -H. Kuo，et al. Type-II InAs/In- GaSb SL photodetectors [C]//SPIE，2000，3948:133-144.
[36] E H Aifer，E M Jackson，G Boishin，et al. Very-long wave ternary antimonide superlattice photodiode with 21 μm cutoff [J]. Applied Physics Letters，2003，82（25）: 4411-4413.
[37] F Szmulowicz，H Haugan，G J Brown. Effect of inter faces and the spin-orbit band on the band gaps of InAs/GaSb superlattices beyond the standard envelopefunc-tion approximation [J]. Physical Review B， 2004，69（15）:155321
[38] W H Lau，M E Flatté. Effect of interface structure on the optical properties of InAs/GaSb laser active regions [J]. Applied Physics Letters，2002，80（10）:1683-1685.
[39] Y Wei，M Razeghi. Modeling of type-II InAs/GaSb superlattices using an empirical tight-binding method and interface engineering[J]. Physical Review B，2004，69（8）: 085316
[40] Y Wei，M Razeghi，G J Brown，et al. Modeling type-II InAs/GaSb superlattices using empirical tight-binding method: new aspects [C]//SPIE，2004，5359:301-308.
[41] Manijeh Razeghi. Nanostructured Sensors[J]. SPIE Pro fessional，2008（7）：
[42] Pierre-Yves Delaunay，Binh-Minh Nguyen，Darin Hof man，et al. Substrate removal for high quantum efficiency back side illuminated type-II InAs/GaSb photodetectors [J]. Applied Physics Letters，2007，91（23）:231106
[43] P Y Delaunay，M Razeghi. High-performance focalplane array based on type-II InAs/GaSb superlattice heterostructures [C]//SPIE，2008，6900: 69000M
[44] E H Aifer，J G Tischler，J H Warner，et al. Dual band LWIR/VLWIR type-II superlattice photodiodes [C]//SPIE，2005，5783:112-122.
[45] D Hoffman，B M Nguyen，P Y Delaunay，et al. Beryl lium compensation doping of InAs/GaSb infrared super lattice photodiodes [J]. Applied Physics Letters，2007，91（14）:143507
[46] Andrew Hood，Manijeh Razeghi，Edward H Aifer，et al. On the performance and surface passivation of type II InAs/GaSb superlattice photodiodes for the verylong-wavelength infrared[J]. Applied Physics Letters，2005，87（15）:151113
[47] Jagmohan Bajaj，Gerry Sullivan，Don Lee. Comparison of Type-II Superlattice and HgCdTe Infrared Detector Technologies[C]//SPIE，2007，6542:654209
