According to the requirements of pulse semiconductor lasers for peak powers, pulse widths and rising edges and considering the test behaviors of semiconductor lasers, a driving circuit for the semiconductor lasers with large current outputting, narrower widths and sharp edges was proposed. The circuit used a Metal Oxide Semiconductor Field Effect Transistor(MOSFET) as a switch device and a avalanche transistor as a driver to generate the large current pulse with sharp edge and narrow width. The effect of the pre-trigger pulse width and output load of the avalanche transistor on the amplitude and waveform of MOSFET output pulse was analyzed and how to adjust the coupling resistance to control the pulse “down” and oscillation was discussed. The experimental results show that the circuit generates electric pulses of 10 ns with continuously adjustable attitudes and sharp rising and falling edges, and the amplitude of pulse varies from 0 A to 148 A on a 1 Ω resistor. After adjusting electric parameters, a 124 A current pulse with a pulse width of 8.6 ns is obtained. The circuit meets the needs of driving high power semiconductor lasers as well as laser testing.