A series of fluorescent materials K2MgSiO4∶Eu3+, Tb3+ were synthesized by the high temperature solid phase method. The phase structure and luminescent properties of the materials were characterized and studied by X-ray diffraction, photoluminescence and fluorescence lifetime. The results show that the X-ray diffraction pattern diffraction peaks of the series samples agree well with the standard card, Eu3+, Tb3+ single doping or co-doping could not change the crystal structure of K2MgSiO4 in the experimental concentration range. It can be seen from the photoluminescence spectrum of the material that the photoluminescence spectrum of Eu3+ doped K2MgSiO4 reveal a red light emission at 613 nm (5D0→7F2) with an excitation at 394 nm (7F0→5L6); With Tb3+ ion singly doped K2MgSiO4 shows a green light emission at 542 nm (5D4→7F5) with an excitation at 378 nm (7F6→5G6). When Eu3+ and Tb3+ are co-doped in the K2MgSiO4, the sample exhibits a strong characteristic emission of Eu3+, the Tb3+ emission peak is weaker, and with the increase of the concentration of Tb3+ ions, the emission of Eu3+ is obviously enhanced, while there is no significant change in the emission of Tb3+. In addition, when the Eu3+ concentration is fixed and the Tb3+ ion doping concentration is gradually increased, the fluorescence lifetime of Eu3+ increased gradually; when the concentration of Tb3+ is fixed and the Eu3+ ion doping concentration is gradually increased, the fluorescence lifetime of Tb3+ decreased gradually. These phenomena determine the energy transfer relationship of Tb3+→Eu3+ in K2MgSiO4∶Eu3+, Tb3+ fluorescent materials. This relationship improves and enhances Eu3+ red light emission in the K2MgSiO4 matrix.