Semiconductor lasers are widely used for laser scanning; however, beam shaping is required because of the significant difference in their fast and slow axis divergence angles. In this study, a design scheme of the integrated lens array beam shaping system is proposed to improve the beam uniformity of the laser diode array and satisfy the miniaturization requirements of the small scanning imaging system. An integrated aspheric lens is used to shape the Gaussian beam. The fast axis is collimated, the slow axis is expanded, and a linear beam with a high aspect ratio and a uniform light intensity distribution can be obtained. Theoretically, the principle of collimation beam expansion of the integrated aspheric lens array is analyzed. The initial structural parameters of the system are determined according to Fermat principle. The system is simulated and optimized using optical design software, and a linear beam with a fast axis divergence angle of 2.8 mrad, slow axis divergence angle of 48.93° (aspect ratio of 325), energy utilization rate of 88.79%, and energy uniformity of 94.51% is obtained. The results show that the shaping effect of the proposed method is ideal. The proposed system has a simple structure and a small size, which is consistent with the development trend of miniaturization of beam shaping systems in the future.