• Optoelectronics Letters
  • Vol. 20, Issue 9, 518 (2024)
Wenbo XIAO1,2,*, Ao LI1, and Bangzhi and XIAO3
Author Affiliations
  • 1Key Laboratory of Nondestructive Test, Ministry of Education, Nanchang Hangkong University, Nanchang 330063, China
  • 2Science and Technology College, Nanchang Hangkong University, Gongqingcheng 332020, China
  • 3School of Engineering and Construction, Nanchang University, Nanchang 330031, China
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    DOI: 10.1007/s11801-024-3210-6 Cite this Article
    XIAO Wenbo, LI Ao, and XIAO Bangzhi. Study on the properties of solar cell under bias condition by using impedance spectroscopy[J]. Optoelectronics Letters, 2024, 20(9): 518 Copy Citation Text show less

    Abstract

    This paper investigates the properties of silicon cells (SI) and perovskite solar cells (PSC) under bias condition by using impedance spectroscopy. The parallel resistances Rp of SI and PSC are found to decrease with increasing bias, but the capacitance Cp shows the opposite trend. Comparing Rp with Cp, bias has a greater impact on the Cp of both cells. However, the bias has little effect on the series resistance Rs of both cells. Compared with SI cell, the bias is seen to be a greater impact on the Rp and a smaller impact on Cp of PSC. The carrier lifetime τn in SI and PSC first increases and then decreases with bias, and the carrier diffusion length Ld increases almost linearly with bias. Compared to SI cell, the bias has a greater impact on PSC’s Ld.
    XIAO Wenbo, LI Ao, and XIAO Bangzhi. Study on the properties of solar cell under bias condition by using impedance spectroscopy[J]. Optoelectronics Letters, 2024, 20(9): 518
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