Terahertz generation from Si_(3)N_(4) covered photoconductive dipole antenna

Wei Shi; Jingzhou Xu; X.-C. Zhang

Journals >Chinese Optics Letters >Volume 1 >Issue 5 >Page 05308 > Article

Chinese Optics Letters
Vol. 1, Issue 5, 05308 (2003)

Terahertz generation from Si_(3)N_(4) covered photoconductive dipole antenna

Wei Shi¹, Jingzhou Xu², and X.-C. Zhang^2,*

Author Affiliations

¹Department of Applied Physics, Xi’an University of Technology, Xi’an 710048

²Center for Terahertz Research, Rensselaer Polytechnic Institute, Troy, NY 12180, USA

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DOI: Cite this Article Set citation alerts

Wei Shi, Jingzhou Xu, X.-C. Zhang, "Terahertz generation from Si_(3)N_(4) covered photoconductive dipole antenna," Chin. Opt. Lett. 1, 05308 (2003) Copy Citation Text

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Abstract

We observe enhanced terahertz (THz) radiation generated from a Si_(3)N_(4) film-coated GaAs photoconductive dipole antenna. Compared to an uncoated antenna with identical electrode geometry and optical excitation power, the Si_(3)N_(4) film-coated antenna has a higher effective DC resistance and larger breakdown voltage. As a result, the peak amplitude of generated THz radiation is significantly enhanced due to the Si_(3)N_(4) film-coated layer.

Keywords

320.7080 320.7130 including semiconductors 320.5390 picosecond phenomena ultrafast devices ultrafast processes in condensed matter