• Optoelectronics Letters
  • Vol. 12, Issue 1, 56 (2016)
Cheng WANG1, Hai-ping XIA1,*, Zhi-gang FENG1, Zhi-xiong ZHANG1..., Dong-sheng JIANG1, Jian ZHANG1, Qi-guo SHENG1, Qing-yang TANG1, Shi-nan HE1, Hao-chuan JIANG2 and Bao-jiu CHEN3|Show fewer author(s)
Author Affiliations
  • 1Key Laboratory of Photoelectronic Materials, Ningbo University, Ningbo 315211, China
  • 2Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315211, China
  • 3Department of Physics, Dalian Maritime University, Dalian 116026, China
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    DOI: 10.1007/s11801-016-5221-4 Cite this Article
    WANG Cheng, XIA Hai-ping, FENG Zhi-gang, ZHANG Zhi-xiong, JIANG Dong-sheng, ZHANG Jian, SHENG Qi-guo, TANG Qing-yang, HE Shi-nan, JIANG Hao-chuan, CHEN Bao-jiu. Enhanced emission at 2.85 μm of Ho3+/Pr3+co-doped α-NaYF4single crystal[J]. Optoelectronics Letters, 2016, 12(1): 56 Copy Citation Text show less
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    WANG Cheng, XIA Hai-ping, FENG Zhi-gang, ZHANG Zhi-xiong, JIANG Dong-sheng, ZHANG Jian, SHENG Qi-guo, TANG Qing-yang, HE Shi-nan, JIANG Hao-chuan, CHEN Bao-jiu. Enhanced emission at 2.85 μm of Ho3+/Pr3+co-doped α-NaYF4single crystal[J]. Optoelectronics Letters, 2016, 12(1): 56
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