[1] HER T,FINLAY R J,WU C,et al.Microstructuring of silicon with femtosecond laser pulses［J］.Applied Physics Letters,1998,73 (12):1673-1675.

[2] PENG Y,ZHANG D S ,CHEN H Y,et al.Differences in the evolution of surface-microstructured silicon fabricated by femtosecond laser pulses with different wavelength［J］.Applied Optics,2012,51(5):635-639.

[3] PRIOLO F,GREGORKIEWICZ T,GALLI M.et al.Silicon nanostructures for photonics and photovoltaics［J］.Nature Nanotechnology,2014,9(1):19-32.

[4] MAILOA J P,AKEY A J,SIMMONS C B,et al.Room-temperature sub-band gap optoelectronic response of hyperdoped silicon［J］.Nature Communications,2014,5:3011.

[5] KIM T G,WARRENDER J M,AZIZ M.Photoluminescence properties peculiar to the Mn-related transition in a lightly alloyed ZnMnO thin film grown by pulsed laser deposition［J］.Applied Physics Letters,2006,88(24):241902.

[6] WU C,CROUCH C H,ZHAO L,et al.Near-unity below-band-gap absorption by microstructured silicon［J］.Applied Physics Letters,2001,78(13):1850-1852.

[7] PENG Y,CHEN X Q,ZHOU Y Y,et al.Annealing-insensitive “black silicon” with high infrared absorption［J］.Journal of Applied Physics,2014,116(7)：073102.

[8] CROUCH C H,CAREY J E,SHEN M,et al.Infrared absorption by sulfur-doped silicon formed byfemtosecond laser irradiation［J］.Applied Physics A，2004,79(7):1635-1641.

[9] SIMMONS C B,AKEY A J ,KRICH J J,et al.Deactivation of metastable single-crystal silicon hyperdoped with sulfur［J］.Journal of Applied Physics,2013,114(24):243514.

[10] SARNET T,HALBWAX M,TORRE R S.Femtosecond laser for black silicon and photovoltaic cells［J］.SPIE,2008,6881:688119.

[11] CROUCH C H,CAREY J E,WARRENDER J M,et al.Comparison of structure and properties of femtosecond and nanosecond laser-structured silicon［J］.Applied Physics Letters,2004，84(11):1850-1852.

[12] PENG Y,WEN Y,ZHANG D S,et al.The optimal relation between laser power and pulse number for the fabrication of surface-microstructured silicon［J］.Applied Optics,2011,50(24):4765-4768.

[13] PENG Y,CHEN H Y,ZHU C G,et al.The effect of laser wavelength on the formation of surface-microstructured silicon［J］.Materials Letters,2012,83:127-129.

[14] SHER M J,Mazur E.Intermediate band conduction in femtosecond-laser hyperdoped silicon［J］.Applied Physics Letters,2014,105(3):032103.