Effect of n-type barrier doping on steady and dynamic performance of InGaN light-emitting diodes

Gui-chu CHEN; Guang-han FAN

doi:10.1007/s11801-014-4033-7

Journals >Optoelectronics Letters >Volume 10 >Issue 4 >Page 250 > Article

Optoelectronics Letters
Vol. 10, Issue 4, 250 (2014)

Effect of n-type barrier doping on steady and dynamic performance of InGaN light-emitting diodes

Gui-chu CHEN^1,2,* and Guang-han FAN²

Author Affiliations

¹Department of Electronic Information, Zhao Qing University, Zhaoqing 526061, China

²Institute of Optoelectronic Material and Technology, South China Normal University,Guangzhou 510631, China

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DOI: 10.1007/s11801-014-4033-7 Cite this Article

CHEN Gui-chu, FAN Guang-han. Effect of n-type barrier doping on steady and dynamic performance of InGaN light-emitting diodes[J]. Optoelectronics Letters, 2014, 10(4): 250 Copy Citation Text

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Abstract

The steady and dynamic properties are comparatively investigated for the n-doped and non-doped InGaN LEDs. Thesimulated results show that the n-doped LED exhibits the superior luminescence and modulation performance, whichis mainly attributed to the higher carrier radiative rate of n-doped LED. The results can explain the reportedexperimental results perfectly.

CHEN Gui-chu, FAN Guang-han. Effect of n-type barrier doping on steady and dynamic performance of InGaN light-emitting diodes[J]. Optoelectronics Letters, 2014, 10(4): 250

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