Oksana Semenova, Aleksei Sosunov, Nikolai Prokhorov, Roman Ponomarev, "Temperature dependence of LiNbO3 dislocation density in the near-surface layer," Chin. Opt. Lett. 20, 061601 (2022)
- Chinese Optics Letters
- Vol. 20, Issue 6, 061601 (2022)
Fig. 1. Etching pits of LiNbO3 (a) after thermal annealing at 500°C and (b) in pristine state.
Fig. 2. Dependence of the dislocation density N determined by wet selective etching on the annealing temperature T.
Fig. 3. AFM image of etch pits and the profile of etching pits (line 146).
Fig. 4. Dependence of ρ110/ρ220 for a single crystal of X-cut LN on the density of chaotically distributed dislocations N, X-ray Co-λβ-radiation.
Fig. 5. Dependence of the dislocation density N (determined by the results of XRD) on the thermal annealing temperature T.
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Table 1. The Experimental Ratio of the Integral Reflection Coefficients ρ 110 / ρ 220
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