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    Journals >Optics and Precision Engineering >Volume 15 >Issue 12 >Page 1926 > Article
    • Optics and Precision Engineering
    • Vol. 15, Issue 12, 1926 (2007)
    Correction of pattern transfer errors for SU-8 UV deep lithography
    1, 1, 2, 2..., 2, 1 and 1|Show fewer author(s)
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    DOI: Cite this Article
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Correction of pattern transfer errors for SU-8 UV deep lithography[J]. Optics and Precision Engineering, 2007, 15(12): 1926 Copy Citation Text show less
    References

    [1] LABIANCA N,GELORME J D.High aspect ratio resist for thick film applications[J].SPIE,1995,2438:846-852.

    [2] LIN D J,ZHOU CH X,YIN Y.Construction principle of I-line illumination optical system and simulation calculation of the intensity distribution[J].Micro Fabrication Technology of China,1999,4:24-27.

    [3] CHEN Y M,ZHENG J J,ZHOU H J,et al..Computer simulation of diffraction in proximity lithography[J].Journal of University of Science and Technology of China,2007,1:30-34.

    [4] YU G B,YAO H M,HU S.Study of the technology of flatness diffraction in UV-LIGA deep lithography[J].Micro Fabrication Technology of China,2002,3:40-43.

    [5] Microchem Corp.SU-8 process data from Micro Chem corp[Z].USA:Microchem Corp,2000.

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Correction of pattern transfer errors for SU-8 UV deep lithography[J]. Optics and Precision Engineering, 2007, 15(12): 1926
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