• Chip
  • Vol. 3, Issue 4, 100116 (2024)
Xiaoshuai An1,2, Sizhe Gui1, Yingxin Li1, Zhiqin Chu2,3,*, and Kwai Hei Li1,**
Author Affiliations
  • 1School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055,
  • 2Department of Electrical and Electronic Engineering, The University of Hong Kong, 999077,
  • 3School of Biomedical Sciences, The University of Hong Kong, 999077,
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    DOI: 10.1016/j.chip.2024.100116 Cite this Article
    Xiaoshuai An, Sizhe Gui, Yingxin Li, Zhiqin Chu, Kwai Hei Li. A versatile optoelectronic device for ultrasensitive negative-positive pressure sensing applications[J]. Chip, 2024, 3(4): 100116 Copy Citation Text show less

    Abstract

    A versatile optoelectronic device with ultrasensitive negative-positive pressure sensing capabilities, which is integrated with a wireless monitoring system, was fabricated and demonstrated in the current work. The device comprises a monolithic GaN chip with a polydimethylsiloxane cavity and nanograting, which effectively transduces pressure stimuli into optical changes detected by the GaN chip. The developed device exhibits an ultra-low detection limit for a mass of 0.03 mg, a pressure of 2.94 Pa, and a water depth of 0.3 mm, with a detection range of -100 kPa to 30.5 kPa and high stability. The versatility of the device is demonstrated by its ability to monitor heart pulse, grip strength, and respiration. Its integration with a wireless data transmission system enables real-time monitoring of human activity and heart rate underwater, making it suitable for precise measurements in various practical applications.
    Xiaoshuai An, Sizhe Gui, Yingxin Li, Zhiqin Chu, Kwai Hei Li. A versatile optoelectronic device for ultrasensitive negative-positive pressure sensing applications[J]. Chip, 2024, 3(4): 100116
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