Thermal stability of magnetron sputtering Ge–Ga–S films

Lei Niu; Yimin Chen; Xiang Shen; Tiefeng Xu

doi:10.1088/1674-1056/aba273

Journals >Chinese Physics B >Volume 29 >Issue 8 >Page > Article

Chinese Physics B
Vol. 29, Issue 8, (2020)

Thermal stability of magnetron sputtering Ge–Ga–S films

Lei Niu¹, Yimin Chen^1,2,†, Xiang Shen¹, and Tiefeng Xu¹

Author Affiliations

¹Laboratory of Infrared Materials and Devices & Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Research Institute of Advanced Technology, Ningbo University, Ningbo 352, China

²Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo 31511, China

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DOI: 10.1088/1674-1056/aba273 Cite this Article

Lei Niu, Yimin Chen, Xiang Shen, Tiefeng Xu. Thermal stability of magnetron sputtering Ge–Ga–S films[J]. Chinese Physics B, 2020, 29(8): Copy Citation Text

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Abstract

Ge–Ga–S thin films were deposited by magnetron sputtering with mean coordination number (MCN) ranging from 2.46 to 2.94. The physical properties of the Ge–Ga–S films, including optical band gap, refractive index, and thickness, vary with the time of heat treatment. Based on the analysis of the topology model, it is concluded that the Ge–Ga–S thin films with components close to the stoichiometric ratio can form the most Ga–S bonds and Ga–S bonds, and the physical properties of the Ge27.3Ga6.3S66.3 (MCN = 2.62) film are the most stable. This is an important reference for thin film photonic devices.

Keywords

chalcogenide thin films optical band gap refractive index thermal stability