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    Journals >Acta Photonica Sinica >Volume 33 >Issue 12 >Page 1461 > Article
    • Acta Photonica Sinica
    • Vol. 33, Issue 12, 1461 (2004)
    Study on the Temperature Dependence of Photoluminescence Peaks of Porous Silicon from 30 to 180℃
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Study on the Temperature Dependence of Photoluminescence Peaks of Porous Silicon from 30 to 180℃[J]. Acta Photonica Sinica, 2004, 33(12): 1461 Copy Citation Text show less

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Study on the Temperature Dependence of Photoluminescence Peaks of Porous Silicon from 30 to 180℃[J]. Acta Photonica Sinica, 2004, 33(12): 1461
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