The preparation conditions of phosphor based on Ba2Mg(BO3)2 host was systematically investigated, effect of Eu3+ content on the host lattice environment and luminescent properties of phosphor as well. The research results show that Ba2+ is increasingly deviate from symmetric center with increase of Eu3+ content. When Eu3+ content is very low, the maximum emission peak of the Ba2Mg(BO3)2∶Eu3+ is at 594 nm. However, Eu3+ content is over 3at%, the emission intensity at 613 nm peak is dramatically enhanced, and is more than that of at the peak of 594 nm in case Eu3+ content is over 3.5at%, which is attributed to the degree of distortion of crystal structure, and result in obvious change of the symmetric properties of the crystal lattice, thus forbidden electric dipolar 5D0→7F2 transition is more released. The prepared orange phosphor can be effectively excited by near ultraviolet InGaN chip and applied to white LED.